VBF-1200X-V9 Vertical Vacuum Furnace with 8″ Quartz Chamber and Water-Cooled Stainless Steel Flange
The VBF-1200X-V9 is engineered for precise thermal processing of semiconductor wafers and other materials requiring controlled vacuum or gas atmospheres. Its vertical design incorporates a quartz tube chamber measuring Ø200×Ø190×H425 mm, suitable for wafers up to 8 inches in diameter and loads up to 40 kg. This configuration supports calcining and annealing processes at temperatures reaching 1100°C under ambient pressure and up to 1000°C under vacuum conditions.
Vacuum integrity is maintained via a stainless steel flange equipped with dual high-temperature silicone O-rings and a water-cooling jacket to prevent seal degradation above 200°C. The furnace achieves vacuum levels as low as 10-5 Torr when paired with a turbopump and appropriate vacuum components. Gas atmosphere control is facilitated through dedicated inlet and outlet needle valves. Temperature regulation is managed by an included NRTL-certified digital PID controller with auto-tuning and programmable ramp, dwell, and cooling segments, ensuring ±1°C accuracy.
Key Features
- Quartz tube chamber (Ø200×Ø190×H425 mm) with stainless steel vacuum flange and water-cooled sealing.
- Maximum operating temperature: 1100°C ambient, 1000°C under vacuum; optional GE214 quartz tube for 1150°C.
- Vacuum capability down to 10-5 Torr using turbopump; mechanical vacuum gauge included.
- Ni-Cr-Al resistance wire heating elements with controlled heating rate up to 20°C/min (recommended 10°C/min).
- Digital PID temperature controller with 30 programmable segments, over-temperature and thermocouple failure alarms.
- Gas inlet and outlet with needle valves for controlled atmosphere processing.
- Water cooling jacket integrated in flange requiring 16 L/min flow to protect vacuum seals.
Technical Specifications
| Parameter | Specification |
|---|---|
| Model | VBF-1200X-V9 |
| Quartz Tube Dimensions | Ø200×Ø190×H425 mm |
| Heating Area | Ø240×H245 mm |
| Max Load Capacity | 40 kg |
| Maximum Temperature | 1100°C ambient, 1000°C vacuum (optional 1150°C with GE214 quartz) |
| Heating Elements | Ni-Cr-Al resistance wire |
| Heating Rate | Up to 20°C/min (recommended 10°C/min) |
| Vacuum Flange | Stainless steel with dual high-temp silicone O-rings and water cooling jacket |
| Vacuum Level | Down to 10-5 Torr with turbopump and quartz thermal block at 900°C |
| Vacuum Gauge | Mechanical gauge (-0.1 to 0.15 MPa) included; optional digital gauge available |
| Gas Ports | One 1/4″ gas inlet and one outlet with needle valves |
| Temperature Controller | NRTL-certified digital PID with auto-tune, 30 programmable segments, alarms, ±1°C accuracy |
| Power Supply | Single-phase 208-240 VAC, 50/60 Hz, max 3 kW |
| Water Cooling | Integrated water jacket in flange; requires 16 L/min flow |
Typical Applications
Ideal for semiconductor wafer annealing, calcining, and thermal processing under vacuum or controlled gas atmospheres. Suitable for research and development in materials science, electronics, and thin film processing requiring precise temperature and atmosphere control.
Configuration & Operating Notes
The furnace includes a mechanical vacuum gauge and a bored Al2O3 foam refractory block; a quartz thermal block is optionally available. Vacuum pumps, digital vacuum gauges, gas mixers, and specialized controllers are sold separately. The water cooling system protects vacuum seals and must be supplied with adequate flow. Users should install appropriate plugs for power connections and ensure gas pressure regulators limit inlet pressure below 3 PSI for safe operation. Maximum temperature under vacuum is recommended at 1000°C to avoid quartz tube deformation. Gas flow rates should be limited to under 200 SCCM to minimize thermal shock.
