VBF-1100X-RTP-ASD Fully Automatic Bottom-Loading Rapid Thermal Processing Furnace with 1100°C Max, 50°C/s Heating Rate, and Atmosphere Control
The VBF-1100X-RTP-ASD is engineered for rapid thermal processing tasks requiring precise temperature control and atmosphere management, such as single-atom catalyst synthesis and wafer annealing up to 6 inches in diameter. Its bottom-loading design facilitates automated sample exchange, enhancing throughput and repeatability in research and production environments.
This furnace incorporates a sealed quartz chamber (Ø200 × H100 mm) with a water-cooled stainless steel flange sealing system to maintain controlled atmospheres during thermal cycles. Twelve shortwave infrared lamps provide up to 18 kW total power, enabling heating rates as fast as 50°C per second from room temperature to 900°C, with continuous operation up to 1000°C and short-term exposure to 1100°C for up to 30 minutes.
주요 기능
- Automated bottom-loading quartz chamber with airtight water-cooled flange sealing for controlled atmosphere processing
- Rapid heating capability up to 50°C/s and programmable temperature profiles with 50 segments via touchscreen control
- Integrated vacuum and pressure monitoring with resistance vacuum gauge and micro-positive pressure control
- Mass flow controller for precise gas flow management up to 5000 sccm with programmable purging and protective gas introduction
- Supports wafer processing up to 6″ diameter with customizable sample stages
- Multi-unit furnace control and data logging through PC software with optional robotic arm integration for automated workflows
- Includes KJ5300 water chiller for flange cooling to ensure stable sealing during operation
기술 사양
| 매개변수 | 사양 |
|---|---|
| 모델 | VBF-1100X-RTP-ASD |
| Product Type | Fully Automatic Bottom-Loading Rapid Thermal Processing Furnace |
| Power Supply | 208 VAC, three-phase, 50/60 Hz |
| Maximum Power | 18 kW |
| Quartz Chamber Dimensions | Ø200 × H100 mm |
| Heating Zone Dimensions | Ø210 × H100 mm |
| Heating Elements | 12 shortwave infrared lamps, 1.5 kW each |
| Continuous Operating Temperature | Up to 1000°C |
| Maximum Operating Temperature | 1100°C (up to 30 minutes) |
| Heating Rate | Up to 50°C/s (room temp to 900°C), recommended 10°C/s |
| Cooling Rate (Sealed Chamber) | 55°C/min (800°C to 350°C), 5°C/min (350°C to 200°C) |
| Cooling Rate (Open Chamber) | 200°C/min (800°C to 350°C), 35°C/min (350°C to 50°C) |
| Thermocouple Type | Type K |
| 온도 제어 | PID automatic control, touchscreen interface, ±1°C accuracy standard, optional ±0.1°C Eurotherm upgrade |
| Furnace Structure | Dual-layer chamber, air cooling, alumina fiber insulation, automated bottom-loading |
| Pressure Control | Vacuum and micro-positive pressure monitoring (103,000–120,000 Pa) |
| Gas Flow Control | Mass flow controller, 0–5000 sccm, programmable purging and gas introduction |
| Sample Stage | Standard 105 mm diameter, 76 × 58 mm recess; custom stages available for 6″ wafers |
| Automation & Software | PC control software for multi-unit operation, programmable cycles, data logging, robotic integration |
| Included Cooling System | KJ5300 water chiller for flange cooling |
대표적인 적용 분야
- Rapid thermal processing of semiconductor wafers and materials research samples
- Preparation of single-atom catalysts requiring precise thermal and atmospheric control
- Annealing, sintering, and heat treatment under controlled vacuum or protective gas atmospheres
- High-throughput automated thermal processing with multi-unit and robotic system integration
구성 및 작동 안내
The furnace includes a water-cooled stainless steel flange sealing system requiring connection to the included KJ5300 water chiller for stable operation. The bottom-loading quartz chamber supports automated sample exchange controlled via integrated software. Optional vacuum pumps are available separately for reduced-pressure processing.
Users should confirm sample stage compatibility for full 6″ wafer processing, as the standard stage dimensions differ. The maximum temperature of 1100°C is limited to short durations (up to 30 minutes). Automated chamber opening for sample exchange occurs at a programmed 300°C stage, requiring safety evaluation for hot surfaces and gas handling.
The system requires a 208 VAC three-phase power supply and supports multi-furnace control from a single PC. Optional robotic arm integration enables autonomous sample handling and high-throughput workflows.
