PCE-3 Compact 0.7 L Plasma Cleaner with Digital Vacuum Gauge and 3″x6.5″ Quartz Chamber for Nanoscale Organic Contamination Removal
The PCE-3 plasma cleaner is engineered to effectively remove nanoscale organic contaminants from wafers up to 2 inches in diameter, making it ideal for pre-cleaning single crystal substrates prior to coating processes. This cleaning step is critical to achieving superior film quality in thin film deposition and other surface-sensitive applications.
The device incorporates a 3-inch diameter by 6.5-inch length high-purity quartz chamber with a 700 mL volume, providing a durable and chemically resistant environment for plasma generation. The quartz tube inside the chamber is removable for straightforward cleaning and replacement, ensuring long-term operational reliability.
Key Features
- Digital vacuum gauge mounted on a hinged door for real-time pressure monitoring.
- Adjustable RF power supply with three settings: low (7 W), medium (11 W), and high (18 W) for controlled plasma intensity.
- Hinged door design facilitates easy sample loading and unloading.
- Includes a double-stage rotary vane vacuum pump controlled via the cleaner’s power line.
- Compatible with various inert gases such as nitrogen, argon, air, and mixed gases; supports <5% hydrogen in inert gas mixtures.
- 1/8″ NPT needle valve and 3-way valve for precise gas flow and chamber pressure control.
- Optional accessories include removable quartz tubes, quartz wafer carriers, and two-channel gas mixers for dual gas plasma processes.
Technical Specifications
| Parameter | Specification |
|---|---|
| Plasma Chamber Dimensions | 3″ diameter x 6.5″ length quartz chamber |
| Chamber Volume | 700 mL |
| RF Power Input | 208-240 VAC, 50/60 Hz, single phase, 20 W |
| RF Power Output Levels | Low: 7 W; Medium: 11 W; High: 18 W |
| Vacuum Gauge | Digital gauge installed on hinged door |
| Vacuum Pump | Double-stage rotary vane vacuum pump included |
| Gas Compatibility | N2, Ar, Air, mixed gases; <5% H2 in inert gas allowed; no flammable gases |
| Sample Size | Up to 2″ wafers |
Typical Applications
The PCE-3 plasma cleaner is widely used in semiconductor wafer preparation, thin film deposition pre-treatment, and research laboratories requiring removal of organic residues at the nanoscale. It is particularly suited for cleaning single crystal substrates to enhance coating adhesion and film uniformity.
Configuration & Operating Notes
The system includes the plasma cleaner unit with hinged door, digital vacuum gauge, and a double-stage rotary vane vacuum pump. Optional quartz tubes and wafer carriers can be ordered separately. For dual gas plasma processes, a two-channel gas mixer is available. Users should avoid flammable gases and ensure proper gas flow control via the integrated valves. Operation at 110 VAC requires an additional transformer.
