PCE-3 Compact 0.7 L Plasma Cleaner with Digital Vacuum Gauge and 3″x6.5″ Quartz Chamber for Nanoscale Organic Contamination Removal
The PCE-3 plasma cleaner is engineered to effectively remove nanoscale organic contaminants from wafers up to 2 inches in diameter, making it ideal for pre-cleaning single crystal substrates prior to coating processes. This cleaning step is critical to achieving superior film quality in thin film deposition and other surface-sensitive applications.
The device incorporates a 3-inch diameter by 6.5-inch length high-purity quartz chamber with a 700 mL volume, providing a durable and chemically resistant environment for plasma generation. The quartz tube inside the chamber is removable for straightforward cleaning and replacement, ensuring long-term operational reliability.
Wichtigste Merkmale
- Digital vacuum gauge mounted on a hinged door for real-time pressure monitoring.
- Adjustable RF power supply with three settings: low (7 W), medium (11 W), and high (18 W) for controlled plasma intensity.
- Hinged door design facilitates easy sample loading and unloading.
- Includes a double-stage rotary vane vacuum pump controlled via the cleaner’s power line.
- Compatible with various inert gases such as nitrogen, argon, air, and mixed gases; supports <5% hydrogen in inert gas mixtures.
- 1/8″ NPT needle valve and 3-way valve for precise gas flow and chamber pressure control.
- Optional accessories include removable quartz tubes, quartz wafer carriers, and two-channel gas mixers for dual gas plasma processes.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Plasma Chamber Dimensions | 3″ diameter x 6.5″ length quartz chamber |
| Kammervolumen | 700 mL |
| RF Power Input | 208-240 VAC, 50/60 Hz, single phase, 20 W |
| RF Power Output Levels | Low: 7 W; Medium: 11 W; High: 18 W |
| Vakuummeter | Digital gauge installed on hinged door |
| Vakuumpumpe | Double-stage rotary vane vacuum pump included |
| Gas Compatibility | N2, Ar, Air, mixed gases; <5% H2 in inert gas allowed; no flammable gases |
| Sample Size | Up to 2″ wafers |
Typische Anwendungsbereiche
The PCE-3 plasma cleaner is widely used in semiconductor wafer preparation, thin film deposition pre-treatment, and research laboratories requiring removal of organic residues at the nanoscale. It is particularly suited for cleaning single crystal substrates to enhance coating adhesion and film uniformity.
Hinweise zur Konfiguration und zum Betrieb
The system includes the plasma cleaner unit with hinged door, digital vacuum gauge, and a double-stage rotary vane vacuum pump. Optional quartz tubes and wafer carriers can be ordered separately. For dual gas plasma processes, a two-channel gas mixer is available. Users should avoid flammable gases and ensure proper gas flow control via the integrated valves. Operation at 110 VAC requires an additional transformer.
