VBF-1100X-RTP-ASD Fully Automatic Bottom-Loading Rapid Thermal Processing Furnace with 1100°C Max, 50°C/s Heating Rate, and Atmosphere Control
The VBF-1100X-RTP-ASD furnace is engineered for precise and rapid thermal processing tasks such as single-atom catalyst synthesis, wafer annealing, and advanced materials research. Its bottom-loading design facilitates automated sample exchange within a tightly sealed quartz chamber, enabling controlled atmosphere treatments and high-throughput workflows.
This system achieves rapid heating rates up to 50°C per second using twelve 1.5 kW shortwave infrared lamps, reaching continuous operating temperatures up to 1000°C and short-term peaks of 1100°C for up to 30 minutes. Integrated software manages vacuum, gas purging, temperature profiles, and sample handling, with options for multi-unit PC control and robotic arm automation.
주요 기능
- Bottom-loading quartz chamber (Ø200 × H100 mm) with water-cooled stainless steel flange sealing for atmosphere control.
- Twelve shortwave infrared lamps delivering 18 kW total power for rapid heating up to 50°C/s.
- Continuous operation at 1000°C, with short-duration processing at 1100°C (max 30 minutes).
- Automated control of vacuum, gas flow (0–5000 sccm), heating, cooling, and sample exchange via touchscreen and PC software.
- Programmable temperature profiles with up to 50 segments and PID control, standard ±1°C accuracy (optional ±0.1°C upgrade).
- Integrated pressure monitoring and micro-positive pressure control (103,000–120,000 Pa).
- Optional robotic arm integration for autonomous sample handling and multi-furnace coordination.
기술 사양
| 매개변수 | 사양 |
|---|---|
| 모델 | VBF-1100X-RTP-ASD |
| Product Type | Fully Automatic Bottom-Loading Rapid Thermal Processing Furnace |
| Power Supply | 208 VAC, three-phase, 50/60 Hz |
| Maximum Power | 18 kW |
| Quartz Chamber Dimensions | Ø200 × H100 mm, airtight with water-cooled stainless steel flange sealing |
| Heating Zone Dimensions | Ø210 × H100 mm |
| Heating Elements | 12 shortwave infrared lamps, 1.5 kW each |
| Continuous Operating Temperature | 1000°C |
| Maximum Operating Temperature | 1100°C (up to 30 minutes) |
| Heating Rate | Up to 50°C/s (recommended 10°C/s) from room temperature to 900°C |
| Cooling Rate (Sealed Chamber) | 55°C/min (800°C to 350°C), 5°C/min (350°C to 200°C) |
| Cooling Rate (Open Chamber) | 200°C/min (800°C to 350°C), 35°C/min (350°C to 50°C) |
| Thermocouple | Type K |
| 온도 제어 | PID automatic control, touchscreen interface, 50 programmable segments, ±1°C accuracy standard, optional ±0.1°C upgrade |
| Furnace Structure & Insulation | Dual-layer chamber, air cooling, high-purity alumina fiber insulation |
| Pressure Control | Vacuum gauge, micro-positive pressure 103,000–120,000 Pa |
| Gas Flow Control | Mass flow controller, 0–5000 sccm, programmable gas purging and protective gas introduction |
| Wafer Compatibility | Up to 6″ wafers (dependent on sample stage/fixture) |
| Automation & Software | PC control, multi-unit operation, robotic arm integration option, data logging |
대표적인 적용 분야
Ideal for rapid thermal processing in materials science, including single-atom catalyst preparation, wafer annealing, and controlled atmosphere sintering. Suitable for research requiring precise temperature ramping and atmosphere control on samples up to 6 inches in diameter.
구성 및 작동 안내
The furnace includes a water-cooled stainless steel flange sealing system and a white quartz chamber with a bottom-loading automated sample stage. The standard sample stage measures 105 mm diameter with a 76 × 58 mm recess; custom stages are available for full 6″ wafer compatibility.
Operation requires 208 VAC three-phase power and proper connection of the included KJ5300 water chiller for flange cooling. Optional vacuum pumps and robotic arms are available separately to extend functionality for reduced-pressure processing and automated sample handling.
The system software supports programmable temperature and gas flow profiles with up to 50 segments, automated chamber evacuation, gas purging, and controlled sample exchange at 300°C. Multi-unit control and data logging facilitate high-throughput and reproducible thermal processing workflows.
