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OTF1200XC3HV 1200°C Tube Furnace with Hi-Vacuum (1E-4 torr) and 3-Channel Gas Flow Control Station for CVD and Thermal Treatments

Designed for chemical vapor deposition (CVD) and diffusion experiments requiring controlled atmospheres.
Operates up to 1200°C with high vacuum capability down to 1E-4 torr.
Includes a 3-channel mass flow gas control station for precise gas mixing and flow.
Equipped with fused quartz processing tube and PID temperature control with ±1°C accuracy.

Konformität: CE-zertifiziert
Maßgeschneidert: OEM/ODM
Verpackung: Sperrholzkiste

Produkte

OTF1200XC3HV 1200°C Tube Furnace with Hi-Vacuum and 3-Channel Gas Flow Control Station for CVD and Thermal Treatments

The OTF1200XC3HV system is engineered to facilitate advanced thermal processing tasks such as chemical vapor deposition (CVD), diffusion, and other vacuum-based heat treatments. It integrates a high-temperature tube furnace capable of reaching 1200°C with a high-vacuum station and a precision gas flow control unit, enabling experiments under controlled atmospheres and reduced pressures.

This workstation features a fused quartz processing tube housed within a double-layer steel casing equipped with air cooling and an automatic thermostat to maintain safe operating temperatures. The furnace heating element is a molybdenum-doped Fe-Cr-Al alloy, providing stable and uniform heating over a 440 mm heating zone, including a 150 mm constant temperature region with ±1°C accuracy. Temperature control is managed by a PID controller with programmable segments and a built-in K-type thermocouple.

Wichtigste Merkmale

  • Maximum operating temperature of 1200°C with continuous operation at 1100°C.
  • High vacuum capability reaching 10-4 torr using stainless steel vacuum flanges and sealing assemblies.
  • Three-channel mass flow gas control station with 6″ color touchscreen and PC remote operation for precise gas mixing.
  • Fused quartz processing tube included; customizable tube diameter available.
  • Integrated high vacuum station with Pfeiffer molecular pump and digital control panel, achieving ultimate pressures below 1E-8 mbar.
  • PID temperature controller with 30 programmable segments, auto-tune, and over-temperature alarms.
  • Safety features including mechanical pressure gauge, needle valves, and vacuum connectors for secure operation.

Technische Daten

Parameter Spezifikation
Furnace Type OTF-1200X Series Tube Furnace
Höchsttemperatur 1200°C (max), 1100°C continuous
Heating Element Fe-Cr-Al Alloy doped with Mo
Heating Zone Length 440 mm total, 150 mm constant temperature zone (±1°C)
Temperaturregelung PID controller, 30 programmable segments, K-type thermocouple
Processing Tube Fused quartz tube (one included, diameter customizable)
Vakuumfähigkeit Ultimate vacuum 10-4 torr with sealing assembly; high vacuum station down to <1E-8 mbar
Gas Flow Control 3-channel mass flow controller with 6″ touchscreen and PC remote control
Stromversorgung Furnace: AC 208-240V, 50/60Hz, single phase; Gas control: AC 220V, 50Hz
Vakuumpumpe Pfeiffer molecular pump with digital control panel

Typische Anwendungsbereiche

This system is suitable for chemical vapor deposition (CVD), diffusion processes, and other thermal treatments requiring precise temperature control under vacuum or controlled gas atmospheres. It is ideal for research and development in materials science, semiconductor processing, and thin film deposition.

Hinweise zur Konfiguration und zum Betrieb

The furnace includes one fused quartz tube; additional tube sizes can be specified separately. Optional upgrades include multi-channel gas control systems with PLC touch panels and PC software, as well as advanced temperature controllers compatible with LabVIEW. Users must install a two-stage pressure regulator on gas cylinders to limit pressure below 3 PSI for safe operation. Gas flow rates should be kept below 200 ml/min to prevent thermal shock to the quartz tube. Vacuum operation is recommended up to 1000°C for safety.

Produktbezogene Informationen

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