OTF-1200X-RTP-II Two-Zone Rapid Thermal Processing Furnace with 11″ Quartz Tube, Up to 650°C for 3″ Diameter Substrates
The OTF-1200X-RTP-II is engineered for precise rapid thermal processing (RTP) and close spaced sublimation (CSS) film deposition on small substrates, including round wafers up to 3″ diameter and square samples up to 2″ by 2″. It is particularly suited for research and development of advanced thin films used in solar cell technologies such as CdTe, sulfide, and perovskite materials.
This furnace employs two independently controlled halogen heater zones positioned above and below the sample, enabling rapid heating rates up to 20°C per second and maximum temperatures reaching 650°C. The heating zones are housed within an 11″ outer diameter high-purity fused quartz tube, providing a clean environment compatible with vacuum and low-pressure conditions. The system integrates precise temperature controllers and gas flow meters to support controlled atmosphere processing.
Wichtigste Merkmale
- Two halogen heater zones with independent 30-segment programmable temperature controllers and ±1°C accuracy.
- Heating rate up to 20°C/s with maximum temperature of 650°C per heater zone.
- 11″ O.D. fused quartz tube chamber with carbon fiber felt insulation and stainless steel 316 vacuum flanges.
- Adjustable heater spacing from 10 to 50 mm to optimize temperature uniformity and gradient control.
- Integrated gas flow meters for dual gas inlet and outlet control with ranges suitable for purging and processing.
- RS485 communication port and dedicated software for PC-based furnace operation and temperature profile logging.
- Vacuum capability down to 10E-5 Torr with appropriate pumps (mechanical or molecular pump required, sold separately).
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Quartz Tube Dimensions | 11″ Outer Diameter × 10.8″ Inner Diameter × 9″ Height |
| Höchsttemperatur | 650°C per heater zone |
| Erwärmungsgeschwindigkeit | Up to 20°C/s (max), typical <8°C/s when heating single heater |
| Abkühlgeschwindigkeit | Up to 10°C/s (600°C to 100°C) |
| Heater Spacing | Adjustable from 10 mm to 50 mm |
| Temperature Controllers | Two digital controllers with 30 programmable segments, PID auto-tune, alarms |
| Sample Holder | 3″ round wafer holder with high thermal conductivity AlN plate (3″ diameter × 0.5 mm thick) |
| Vakuumfähigkeit | Down to 10E-5 Torr with molecular pump (mechanical pump achieves 10E-2 Torr) |
| Gas Flow Meters | Two float meters: 16–160 mL/min and 400–4000 mL/min ranges |
| Stromversorgung | 208–240 VAC, single-phase, 20A breaker, 2200 W total (1100 W per heater) |
Typische Anwendungsbereiche
The OTF-1200X-RTP-II is ideal for rapid thermal annealing and thin film deposition research in photovoltaic device development, including CdTe, sulfide, and perovskite solar cells. It supports precise temperature profiling for material synthesis and film uniformity studies under vacuum or controlled gas atmospheres.
Hinweise zur Konfiguration und zum Betrieb
The furnace requires an external vacuum pump, which must be ordered separately. Mechanical pumps can achieve vacuum levels down to 10E-2 Torr, while molecular pumps enable ultra-high vacuum down to 10E-5 Torr. For corrosive gases, an anti-corrosive dry pump is recommended. A recirculating water chiller is available optionally to support cooling and reduce water consumption.
The quartz tube and furnace are designed for vacuum and low-pressure operation below 0.2 bar (3 psi). Gas flow rates should be limited to below 200 SCCM to minimize thermal shock risks. The system includes safety alarms and PID control to prevent overheating and protect heating elements.
Maße & Versand
| Product dimensions | 850(L) × 745(W) × 1615(H) mm |
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