OTF-1100X-III Three-Zone Tube Furnace with 11″ or 15″ Quartz Tube, Motorized Lid, and ±1°C PID Temperature Control up to 1100°C
The OTF-1100X-III is engineered for advanced laboratory heat treatment tasks such as wafer annealing, materials synthesis, diffusion processes, and bulk sample heat treatment under vacuum or controlled gas atmospheres. Its design addresses the need for precise temperature uniformity and controlled atmosphere conditions over extended sample lengths.
This tube furnace incorporates three independently controlled heating zones, each 300 mm in length, combining to a total heating zone of 900 mm. The constant temperature zone extends 600 mm with a temperature uniformity within ±5°C at 800°C. The furnace lid is equipped with motorized actuators for effortless opening and closing, enhancing operational convenience and safety.
Wichtigste Merkmale
- Maximum continuous operating temperature of 1100°C at ambient pressure, with short-term capability up to 1200°C.
- Selectable quartz tube diameters of 11″ or 15″ with a length of 73″ to accommodate various sample sizes.
- Three programmable PID temperature controllers enabling smooth heating and cooling ramps with temperature fluctuation less than ±1°C.
- Double-layer steel casing with air cooling to maintain external surface temperature below 70°C for safety.
- Hermetically sealed hinged stainless steel flanges with elastomer seals and silicon O-rings for vacuum and gas atmosphere integrity.
- Integrated thermocouple type K for accurate temperature measurement.
- RS-485 communication interface for remote monitoring and control.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Stromversorgung | 480 VAC, three phase, 50/60 Hz, 40 A, 30 kVA |
| Heizzonen | Three zones, each 300 mm; total 900 mm |
| Constant Temperature Zone Length | 600 mm ±5°C at 800°C |
| Heizelemente | 42 Silicon Carbide (SiC) elements |
| Maximum Operating Temperature | 1100°C continuous; 1200°C up to 30 minutes; 900°C under vacuum |
| Erwärmungsgeschwindigkeit | Up to 10°C/min; recommended ≤5°C/min |
| Temperaturregelung | Three programmable PID controllers; ±1°C accuracy; 30 segments; RS-485 communication |
| Optional Controllers | Three Eurotherm 3000 series PID controllers; ±0.1°C accuracy; 24 segments |
| Thermoelementtyp | Typ K |
| Quartz Tube Options | 11″ or 15″ outer diameter, 73″ length |
| Thermal Insulation | Fibrous alumina refractory insulation; optional multi-quartz disk thermal blocks for higher vacuum |
| Vakuumfähigkeit | <5e-2 torr with backing pump and alumina blocks; <1e-4 torr with turbo pump and quartz blocks |
| Pressure Limit | Less than 3 psig |
| Furnace Casing | Double-layer steel with air cooling |
| Flanges | Stainless steel hinged flanges with elastomer seals and silicon O-rings |
Typische Anwendungsbereiche
This furnace is ideal for semiconductor wafer annealing, materials synthesis requiring controlled atmospheres, diffusion studies, and heat treatment of bulk samples under vacuum or inert gas environments.
Hinweise zur Konfiguration und zum Betrieb
The furnace includes a 10-foot power cord and requires on-site installation. Optional accessories include quartz wafer boats for 8″ or 12″ wafers and multi-quartz disk thermal blocks for enhanced vacuum performance. Users should ensure proper vacuum pump compatibility and observe pressure limits below 3 psig during operation.
