VBF-1050X-H8 Atmosphere Controlled Rapid Thermal Processing Furnace for 8″ Wafers up to 1000°C
The VBF-1050X-H8 is engineered to meet the demands of rapid thermal annealing for semiconductor wafers, accommodating up to 8-inch round or 6-inch square wafers. It provides precise atmosphere control within a vacuum chamber, enabling processing under vacuum or inert gas environments. This capability is essential for applications requiring contamination-free thermal treatment and controlled oxidation or reduction conditions.
The furnace utilizes infrared (IR) heating lamps housed in water-cooled stainless steel holders inside a vacuum chamber measuring 16″ x 14″ x 15″. The heating chamber itself is 8.5″ square with a 10 mm height, suitable for wafers up to 8″ diameter and 5 mm thickness. A quartz observation window and KF25 vacuum port with gas inlet/outlet valves facilitate monitoring and atmosphere control. The system includes a mechanical vacuum gauge and supports programmable temperature profiles via a digital controller with 30 segments and RS485 communication for PC operation.
Key Features
- Rapid heating up to 1000°C with a maximum rate of 5°C/second and temperature stability within ±1°C.
- Vacuum chamber with IR heating lamps and water-cooled holders for uniform temperature distribution.
- Programmable digital temperature controller with 30 segments and RS485 interface for automated control.
- Quartz observation window and KF25 vacuum port with integrated gas valves for atmosphere management.
- Includes a 16 L/min recirculating water chiller to maintain cooling of the heating chamber.
- Supports vacuum levels down to 10⁻² torr with a rotary pump; turbopump and digital vacuum gauge available as options.
- Compatible with wafers up to 8″ diameter and 5 mm thickness.
Technical Specifications
| Parameter | Specification |
|---|---|
| Model | VBF-1050X-H8 |
| Heating Method | Infrared (IR) heating lamps |
| Heating Chamber Size | 8.5″ x 8.5″ x 10 mm (200 x 200 x 10 mm) |
| Maximum Temperature | 1000°C (up to 30 minutes), continuous operation ≤ 800°C |
| Heating Rate | Up to 5°C/second (300°C/min) |
| Cooling Rate | Up to 1°C/second (60°C/min) |
| Temperature Stability | ±1°C |
| Temperature Controller | Digital, 30 programmable segments, RS485 interface |
| Vacuum Chamber Dimensions | 16″ x 14″ x 15″ (406 x 356 x 381 mm) |
| Vacuum Ports | KF25 vacuum port with gas inlet/outlet valves |
| Vacuum Level | 10⁻² torr with rotary pump (cold), 10⁻⁴ torr with turbopump (optional) |
| Water Cooling | Water-cooled stainless steel holders and 16 L/min recirculating water chiller included |
| Power Supply | AC 208-240V, single phase, 50/60 Hz, 12 kW |
| Thermocouple | K-type thermocouple included |
Typical Applications
Ideal for rapid thermal annealing of semiconductor wafers, thin film processing, oxidation, diffusion, and other thermal treatments requiring precise atmosphere control and fast temperature ramping.
Configuration & Operating Notes
The vacuum pump is not included and must be ordered separately. Options include rotary mechanical pumps and turbopumps for higher vacuum levels. A digital vacuum gauge and inner gas delivery system are available as optional accessories. The power cable is supplied without a plug; users should install a plug suitable for their local power standards. The system includes safety features such as water cooling to protect components during high-temperature operation. Use caution with corrosive or acidic gases as damage from these is not covered under warranty.
