VBF-1050X-H8 Atmosphere Controlled Rapid Thermal Processing Furnace for 8″ Wafers up to 1000°C
The VBF-1050X-H8 is engineered to meet the demands of rapid thermal annealing for semiconductor wafers, accommodating up to 8-inch round or 6-inch square wafers. It provides precise atmosphere control within a vacuum chamber, enabling processing under vacuum or inert gas environments. This capability is essential for applications requiring contamination-free thermal treatment and controlled oxidation or reduction conditions.
The furnace utilizes infrared (IR) heating lamps housed in water-cooled stainless steel holders inside a vacuum chamber measuring 16″ x 14″ x 15″. The heating chamber itself is 8.5″ square with a 10 mm height, suitable for wafers up to 8″ diameter and 5 mm thickness. A quartz observation window and KF25 vacuum port with gas inlet/outlet valves facilitate monitoring and atmosphere control. The system includes a mechanical vacuum gauge and supports programmable temperature profiles via a digital controller with 30 segments and RS485 communication for PC operation.
Wichtigste Merkmale
- Rapid heating up to 1000°C with a maximum rate of 5°C/second and temperature stability within ±1°C.
- Vacuum chamber with IR heating lamps and water-cooled holders for uniform temperature distribution.
- Programmable digital temperature controller with 30 segments and RS485 interface for automated control.
- Quartz observation window and KF25 vacuum port with integrated gas valves for atmosphere management.
- Includes a 16 L/min recirculating water chiller to maintain cooling of the heating chamber.
- Supports vacuum levels down to 10⁻² torr with a rotary pump; turbopump and digital vacuum gauge available as options.
- Compatible with wafers up to 8″ diameter and 5 mm thickness.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Modell | VBF-1050X-H8 |
| Heizverfahren | Infrared (IR) heating lamps |
| Heating Chamber Size | 8.5″ x 8.5″ x 10 mm (200 x 200 x 10 mm) |
| Höchsttemperatur | 1000°C (up to 30 minutes), continuous operation ≤ 800°C |
| Erwärmungsgeschwindigkeit | Up to 5°C/second (300°C/min) |
| Abkühlgeschwindigkeit | Up to 1°C/second (60°C/min) |
| Temperaturstabilität | ±1 °C |
| Temperaturregler | Digital, 30 programmable segments, RS485 interface |
| Vacuum Chamber Dimensions | 16″ x 14″ x 15″ (406 x 356 x 381 mm) |
| Vakuumanschlüsse | KF25 vacuum port with gas inlet/outlet valves |
| Vakuumniveau | 10⁻² torr with rotary pump (cold), 10⁻⁴ torr with turbopump (optional) |
| Wasserkühlung | Water-cooled stainless steel holders and 16 L/min recirculating water chiller included |
| Stromversorgung | AC 208-240V, single phase, 50/60 Hz, 12 kW |
| Thermoelement | K-type thermocouple included |
Typische Anwendungsbereiche
Ideal for rapid thermal annealing of semiconductor wafers, thin film processing, oxidation, diffusion, and other thermal treatments requiring precise atmosphere control and fast temperature ramping.
Hinweise zur Konfiguration und zum Betrieb
The vacuum pump is not included and must be ordered separately. Options include rotary mechanical pumps and turbopumps for higher vacuum levels. A digital vacuum gauge and inner gas delivery system are available as optional accessories. The power cable is supplied without a plug; users should install a plug suitable for their local power standards. The system includes safety features such as water cooling to protect components during high-temperature operation. Use caution with corrosive or acidic gases as damage from these is not covered under warranty.
