OTF-1200X-RTP-II-CSS-300 Rapid Thermal Processing Furnace with Rotating Holder for 12″ Wafers
The OTF-1200X-RTP-II-CSS-300 is engineered to support advanced thin film research and semiconductor wafer annealing, specifically accommodating 12-inch wafers. It is optimized for close spaced sublimation (CSS) film coating processes, commonly used in developing next-generation solar cell materials such as CdTe, sulfide, and perovskite films. The furnace enables precise thermal treatment with rapid heating and cooling cycles under high vacuum conditions.
This system employs two independent halogen infrared heating groups positioned at the top and bottom of the vacuum chamber, allowing separate temperature control with a maximum working temperature of 950°C. The top wafer holder is rotatable at adjustable speeds between 1 and 10 RPM to ensure uniform film deposition and temperature distribution. The vacuum chamber is constructed from stainless steel with a 20-inch inner diameter and achieves vacuum levels as low as 10-5 torr using a turbopump.
Key Features
- Dual halogen IR heaters with independent top and bottom control and adjustable gap (2-25 mm) for precise temperature management.
- Rotatable 12″ diameter wafer holder integrated into the top heater, adjustable rotation speed from 1 to 10 RPM for uniform coating.
- Vacuum chamber made of stainless steel (20″ ID x 460 mm height) capable of reaching 10-5 torr via turbopump or 10-2 torr with mechanical pump.
- Eurotherm 3000 digital temperature controllers with ±0.1°C accuracy and programmable 24-segment temperature profiles.
- Touch screen computer interface for controlling temperature, vacuum, rotation speed, and process parameters with data logging.
- Water-cooled stainless steel heaters with graphite plates to enhance heating uniformity and a circulating water chiller (58 L/min) included.
- Maximum heating rate up to 20°C/s and cooling rate up to 10°C/s within specified temperature ranges.
Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Working Temperature | 950°C |
| Heating Rate | Up to 20°C/s (max 1200°C/min) |
| Cooling Rate | Up to 10°C/s (600 – 100°C range) |
| Vacuum Level | 10-5 torr (turbopump), 10-2 torr (mechanical pump optional) |
| Vacuum Chamber Dimensions | 500 mm ID x 460 mm height |
| Wafer Holder Diameter | 12 inches (304.8 mm) |
| Rotation Speed | 1 – 10 RPM adjustable |
| Heaters | Two halogen IR heaters (top and bottom) with water cooling and graphite plates |
| Temperature Control | Dual Eurotherm 3000 controllers, ±0.1°C accuracy, 24-segment programmable |
| Power Supply | 208-240 VAC, 3-phase, 50/60 Hz (380 VAC 3-phase optional), max 60 kW |
| Observation Windows | Two 60 mm diameter quartz windows |
| Control Interface | Touch screen computer with PLC control and data logging |
Typical Applications
This furnace is ideal for research and development of thin film solar cells including CdTe, sulfide, and perovskite materials using close spaced sublimation techniques. It also supports annealing processes for 12″ semiconductor wafers requiring rapid thermal cycling under high vacuum. The rotatable holder ensures uniform film deposition and temperature distribution, critical for high-quality thin film fabrication.
Configuration & Operating Notes
The system includes a circulating water chiller for heater cooling and a precision digital vacuum gauge. Optional vacuum pumps (turbopump or mechanical) and gas delivery systems such as digital mass flow controllers can be added based on process requirements. For processes involving corrosive gases, cold traps or anti-corrosive dry pumps are recommended to protect the vacuum system. The power cable is supplied without a plug, and a 200A breaker is required for operation. Safety precautions should be observed when operating at high temperatures and vacuum conditions.
