OTF-1200X-III-RR Roll-to-Roll CVD System for Continuous Graphene and 2D Film Growth
The OTF-1200X-III-RR is engineered to enable continuous chemical vapor deposition (CVD) processes on flexible substrates such as copper foil, facilitating scalable production of graphene and other two-dimensional films. This laboratory-scale system integrates a roll-to-roll mechanism that transports substrates through a heated quartz tube, allowing uninterrupted film growth under controlled conditions.
This system employs a three-zone split tube furnace with a high-purity quartz processing tube of 100 mm outer diameter and 1400 mm length. The furnace can reach a maximum temperature of 1200°C for short durations and sustain continuous operation at up to 1100°C. Precise temperature control is achieved via three independently programmable zones with PID auto-tuning and ±1°C accuracy, ensuring uniform thermal profiles essential for high-quality film deposition.
Key Features
- Roll-to-roll substrate transport with adjustable speed from 1 to 400 mm/min for continuous processing
- Three-zone split tube furnace with Fe-Cr-Al-Mo heating elements and maximum temperature of 1200°C (limited to under 60 minutes)
- High-purity quartz tube (Ø100 × 1400 mm) connected to vacuum chambers for substrate feeding and collection
- Integrated touchscreen control panel for temperature and process monitoring
- Two vacuum chambers maintaining substrate environment at approximately 5 × 10⁻² Torr
- Optional gas delivery systems, vacuum pumps, and temperature controller upgrades available
Technical Specifications
| Parameter | Specification |
|---|---|
| Furnace Type | Three-zone split tube furnace |
| Heating Elements | Fe-Cr-Al alloy doped with molybdenum (Mo) |
| Maximum Temperature | 1200°C (less than 60 minutes), continuous up to 1100°C |
| Heating Zones | 3 independently controlled zones (150 mm, 300 mm, 150 mm) |
| Quartz Tube Dimensions | Ø100 mm × 1400 mm length |
| Substrate Transport Speed | Adjustable 1–400 mm/min |
| Vacuum Chambers | Two chambers at tube ends, vacuum level ~5 × 10⁻² Torr |
| Temperature Control Accuracy | ±1°C with PID auto-tuning |
| Power Supply | 220V AC, single phase, 50/60 Hz |
| Maximum Power | 5 kW |
Typical Applications
This system is primarily used for continuous graphene growth on copper foil substrates and other flexible materials requiring uniform thin-film deposition. It supports research and development efforts aimed at scalable manufacturing of 2D materials and related CVD films. Optional configurations enable hydrogen wire annealing and accommodate larger diameter tubes for specialized processes.
Configuration & Operating Notes
The OTF-1200X-III-RR includes a precision tension control mechanism introduced in 2023 to enhance substrate handling during roll-to-roll processing. Optional accessories include a three-channel gas delivery station with mass flow controllers for methane, hydrogen, and argon gases, as well as vacuum pumps and advanced temperature controllers. Safety precautions require appropriate gas leak detection and alarms when using flammable gases such as hydrogen and methane. The maximum furnace temperature should not exceed 1200°C for more than 60 minutes, with continuous operation recommended at or below 1100°C. Confirm optional equipment inclusion and configuration details prior to ordering.
Dimensions & Shipping
| Product dimensions | Length: 2400 mm; Width: 600 mm; Height: 1400 mm | 2400 × 600 × 1400 mm (L × W × H) |
|---|
