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OTF-1200X-III-HVC-LD Three-Zone Tube Furnace with High Vacuum Station and 4-Channel Mass Flow Controller for CVD up to 1200°C

Designed for chemical vapor deposition and thermal treatments under vacuum and controlled gas atmospheres.
Features a three-zone tube furnace with fused quartz processing tube and max temperature of 1200°C.
Includes a high vacuum station achieving pressures down to 10⁻⁴ torr and a 4-channel digital mass flow controller.

Compliance: CE Certified
Customized: OEM/ODM
Package: Plywood case package

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OTF-1200X-III-HVC-LD Three-Zone Tube Furnace with High Vacuum Station and 4-Channel Mass Flow Controller for CVD up to 1200°C

The OTF-1200X-III-HVC-LD is engineered to support advanced chemical vapor deposition (CVD), diffusion, and other thermal processing tasks requiring precise temperature control and vacuum conditions. It integrates a three-zone tube furnace with a fused quartz processing tube, enabling uniform heating up to 1200°C. This setup is ideal for experiments demanding controlled atmospheres and low-pressure environments.

The system includes a high vacuum station capable of reaching ultimate pressures below 10⁻⁸ mbar (without leaks), ensuring a clean environment for sensitive processes. A 4-channel digital mass flow controller (MFC) allows accurate mixing and delivery of multiple gases into the furnace tube, facilitating complex gas flow profiles essential for CVD and related applications.

Key Features

  • Three independent heating zones totaling 900 mm length with PID temperature controllers and ±1°C accuracy.
  • Fused quartz processing tube included; tube size selectable as an option.
  • High vacuum station with Pfeiffer molecular pump, LCD control panel, and vacuum sensor achieving pressures down to <1E-8 mbar.
  • 4-channel mass flow controller with digital LED display, capable of precise gas flow control from 0 to 499 SCCM per channel.
  • Double-layer steel casing with automatic air cooling and built-in thermostat for safe operation.
  • Heating elements made of Mo-doped Fe-Cr-Al alloy for reliable high-temperature performance.
  • Programmable heat-up rate from 1 to 20°C per minute for controlled thermal ramping.

Technical Specifications

Parameter Specification
Maximum Working Temperature 1200°C
Continuous Working Temperature 1100°C
Heating Zones 3 zones, each 300 mm length (total 900 mm)
Temperature Control Three PID controllers, ±1°C accuracy, K-type thermocouple
Heating Element Mo-doped Fe-Cr-Al alloy
Power Supply AC 208-240V, Single phase, 50/60Hz
Power Consumption 7 kW
Processing Tube Fused quartz tube (one included)
Vacuum Flanges Stainless steel with mechanical pressure gauge, needle valves, KF-40 connector
High Vacuum Station Pfeiffer molecular pump, LCD control, vacuum sensor, pressure range 1000 mbar to <1E-7 mbar
Ultimate Vacuum Pressure <1E-8 mbar (leak-free)
Mass Flow Controller Channels 4 channels with ranges: 0-100 SCCM, 1-199 SCCM (x2), 1-499 SCCM
MFC Power Supply AC 208-240V, Single phase, 50/60Hz, 18W

Typical Applications

This furnace workstation is suited for chemical vapor deposition (CVD) processes, diffusion treatments, and other thermal processes requiring precise temperature zones under vacuum or controlled gas atmospheres. It is particularly useful for research and development in thin film deposition, semiconductor fabrication, and materials science.

Configuration & Operating Notes

The system includes one fused quartz tube and a vacuum flange assembly with pressure gauges and valves. Optional accessories such as bubblers or evaporators for CVD can be added separately. Users must calibrate temperature for accuracy and install a two-stage pressure regulator on gas cylinders to limit pressure below 3 PSI to protect the quartz tube. Gas flow rates should be kept below 200 SCCM to minimize thermal shock. Vacuum operation is recommended up to 1000°C for quartz tube safety.

Dimensions & Shipping

Product dimensions 1100(L) x 450(W) x 670(H), mm

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