MIST-1600-6 High-Temperature MIST/LPCVD System for Thin Film Epitaxy on 6″ Wafers up to 1600°C
The MIST-1600-6 system is engineered for advanced epitaxial growth of thin films on substrates up to 6 inches in diameter, supporting processes that require extremely high temperatures up to 1600°C. It is particularly suited for next-generation semiconductor materials such as gallium oxide (Ga2O3) and boron nitride (BN), where precise thermal and chemical control is critical.
This system employs an induction-heated graphite wafer stage that provides rapid and uniform heating with PID temperature control, maintaining temperature accuracy within ±1°C. The hermetically sealed quartz chamber ensures a controlled low-pressure chemical vapor deposition (LPCVD) environment, minimizing precursor leakage and contamination risks.
Key Features
- Induction heating power supply delivering 15 kW at 208-240 VAC, 3 phase, with frequency range 30-100 kHz.
- Graphite wafer stage (Ø165 mm OD) with precise PID temperature control and C-type thermocouple feedback.
- Boron nitride shower head with 0.5 mm orifices for uniform precursor distribution at elevated temperatures.
- Hermetic quartz LPCVD chamber (Ø216 mm OD × 500 mm H) with thermal insulation and observation window.
- Capacitance-enhanced Pirani vacuum gauge for pressure monitoring down to 3.8×10⁻⁵ torr.
- Precursor evaporator (bubbler) with 100 ml capacity, stainless steel construction, and heating jacket up to 150°C.
- Built-in safety interlocks for water flow, overheating, and overpower protection.
Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Temperature | 1600°C (max for <1 hour), 1500°C working |
| Heating Method | Induction heating with graphite substrate holder |
| Temperature Control | PID control with 30 programmable segments, ±1°C accuracy, C-type thermocouple |
| Wafer Size | Up to 6″ diameter |
| CVD Chamber | Quartz, Ø216 mm OD × 500 mm H, hermetic sealing |
| Shower Head | 4″ boron nitride with 0.5 mm orifice |
| Precursor Bubbler | 316 stainless steel, 100 ml, heating jacket to 150°C |
| Vacuum Gauge | Capacitance-enhanced Pirani, up to 3.8×10⁻⁵ torr |
| Power Supply | 15 kW, 208-240 VAC, 3 phase, 50/60 Hz |
| Induction Coil | Ø220 mm ID × 70 mm H, 8 mm copper, 4 turns |
| Cooling Water | >30 psi, >6 L/min, temperature below 30°C |
Typical Applications
The MIST-1600-6 is ideal for research and development of high-temperature thin film deposition processes, including epitaxial growth of wide bandgap semiconductors such as Ga2O3 and BN. It supports uniform precursor delivery and precise thermal management necessary for advanced semiconductor device fabrication.
Configuration & Operating Notes
Optional accessories include an oil-free dry scroll vacuum pump for LPCVD vacuum generation, a digital recirculating water chiller for cooling, and a multi-channel gas mixer with PLC touch panel for precise gas flow control. A Honeywell UL-approved hydrogen gas detector is also available for enhanced safety monitoring.
For safe operation, it is recommended to install the system inside a fume hood to manage any potential precursor leaks. The system incorporates multiple interlocks to protect against overheating, overpower, and insufficient cooling water flow.
