GSL1100X-PJF-H Atmospheric Plasma Beam System with Automatic 2D Scanning Stage and Heating Plate
The GSL1100X-PJF-H is engineered to deliver precise surface treatment by combining an atmospheric plasma beam with a programmable two-dimensional scanning stage and an integrated heating plate. This configuration enables uniform plasma exposure across sample surfaces, enhancing coating consistency and surface activation without requiring vacuum conditions. It is particularly effective for treating delicate materials such as single crystal wafers, optical components, and various plastics.
The system integrates an RF plasma generator operating at 20-23 kHz with a plasma beam head of 10-12 mm diameter, flexible gas delivery, and a CNC-controlled X-Y stage capable of scanning areas up to 200 mm by 100 mm. A vacuum chuck sample holder and a heating plate capable of reaching 500°C provide versatile sample handling options. The heating plate supports sample temperatures up to 500°C, facilitating plasma-enhanced chemical vapor deposition (PECVD) processes at atmospheric pressure.
Key Features
- Atmospheric plasma beam with RF generator outputting 20-23 kHz at 25 kV for rapid surface activation and cleaning.
- Automatic X-Y scanning stage driven by step motors with CNC control and programmable scanning patterns for uniform treatment.
- Integrated heating plate with maximum temperature of 500°C and 1500W power for substrate heating during treatment.
- Vacuum chuck sample holder compatible with wafers up to 6 inches diameter, including vacuum pump for secure holding.
- Supports multiple inert gases including air, nitrogen, argon, helium, or their mixtures at minimum 40 PSI input pressure.
- Compact system mounted on a mobile cart for flexible laboratory placement.
Technical Specifications
| Parameter | Specification |
|---|---|
| Input Power for Plasma | 208-240 VAC, 50/60 Hz, < 1000 W |
| RF Generator Output Frequency | 20-23 kHz |
| Plasma Beam Head Diameter | 10-12 mm (round) |
| Input Gas Pressure | Minimum 40 PSI (0.055 MPa) |
| Working Gases | Air, N2, Ar, He, or mixed inert gases (no flammable/explosive gases) |
| Plasma Working Pressure | 7-10 PSI |
| Operating Environment | Temperature < 42°C, Humidity ≤ 40% RH, No flammable gases |
| Sample Stage Movement | X-Y axes driven by step motors, CNC controlled; Z-axis manual adjustment |
| Max Scanning Area | 200 mm (X) × 100 mm (Y) |
| Heating Plate Max Temperature | 500°C |
| Heating Plate Power | 1500 W, AC 220 V, 50-60 Hz (110 V with transformer) |
| Heating Plate Area | 180 mm × 180 mm |
| Vacuum Chuck Diameter | 4 inches, holds wafers up to 6 inches diameter |
| Included Accessories | Vacuum pump, CNC control box with LCD, mobile cart |
Typical Applications
The GSL1100X-PJF-H is ideal for rapid surface activation and cleaning of sensitive materials such as single crystal wafers and optical components without vacuum. It supports plasma-enhanced chemical vapor deposition (PECVD) at atmospheric pressure, enabling thin film growth on substrates at low temperatures. The system is suitable for research and development in semiconductor processing, optics manufacturing, and advanced polymer surface treatment.
Configuration & Operating Notes
The system includes a programmable CNC control box with an LCD display for setting scanning programs and controlling the X-Y stage. The Z-axis height is manually adjustable to optimize plasma beam focus. The heating plate and vacuum chuck are interchangeable on the sample stage, allowing flexible sample mounting. Users must supply inert gases at appropriate pressure and avoid flammable or explosive gases. An optional blue adhesive plastic film for the vacuum chuck is available separately to enhance wafer holding.
Dimensions & Shipping
| Product dimensions | & Net Weight; Coating Stage with Frame: 630 x 500 x 700 mm (W x D x H); Plasma Generator: 390 x 500 x 220 mm (W x D x H); CNC Controller: 390 x 400 x 180 (W x D x H) |
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