VBF-1100X-RTP-ASD Fully Automatic Bottom-Loading Rapid Thermal Processing Furnace with 1100°C Max, 50°C/s Heating Rate, and Atmosphere Control
The VBF-1100X-RTP-ASD is engineered to meet the demands of advanced materials research and semiconductor wafer processing requiring rapid and precise thermal treatments. It excels in applications such as single-atom catalyst synthesis and wafer annealing up to 6 inches in diameter, providing a tightly controlled atmosphere within an airtight quartz chamber. This bottom-loading furnace enables automated sample exchange, enhancing throughput and repeatability in research workflows.
The system incorporates 12 shortwave infrared lamps delivering a combined 18 kW power, achieving heating rates up to 50°C per second from room temperature to 900°C. Continuous operation is supported up to 1000°C, with the capability for short-duration processing at 1100°C for up to 30 minutes. Temperature control is managed via a PID controller with touchscreen interface, programmable for up to 50 temperature segments and standard accuracy of ±1°C, upgradeable to ±0.1°C with an optional Eurotherm controller.
주요 기능
- Bottom-loading quartz chamber (Ø200 × H100 mm) with water-cooled stainless steel flange sealing for controlled atmosphere processing.
- 12 shortwave infrared lamps (1.5 kW each) enabling rapid heating rates up to 50°C/s.
- Automated sample loading/unloading with programmable vacuum, gas purging, and gas flow control via integrated mass flow controller (0–5000 sccm).
- Continuous operation to 1000°C; short-term operation at 1100°C for up to 30 minutes.
- PID temperature control with touchscreen interface and multi-unit PC software for remote monitoring and control.
- Optional robotic arm integration for autonomous high-throughput sample handling and multi-furnace coordination.
- Included water chiller (model KJ5300) for flange cooling to maintain sealing integrity during operation.
기술 사양
| 매개변수 | 사양 |
|---|---|
| 모델 | VBF-1100X-RTP-ASD |
| Product Type | Fully Automatic Bottom-Loading Rapid Thermal Processing Furnace |
| Power Supply | 208 VAC, three-phase, 50/60 Hz |
| Maximum Power | 18 kW |
| Quartz Chamber Dimensions | Ø200 × H100 mm airtight chamber |
| Heating Zone Dimensions | Ø210 × H100 mm |
| Heating Elements | 12 shortwave infrared lamps, 1.5 kW each |
| Continuous Operating Temperature | Up to 1000°C |
| Maximum Operating Temperature | 1100°C for up to 30 minutes |
| Heating Rate | Up to 50°C/s (room temp to 900°C), recommended 10°C/s |
| Cooling Rate (Sealed Chamber) | 55°C/min (800°C to 350°C), 5°C/min (350°C to 200°C) |
| Cooling Rate (Open Chamber) | 200°C/min (800°C to 350°C), 35°C/min (350°C to 50°C) |
| Thermocouple | Type K |
| 온도 제어 | PID control, touchscreen interface, 50 programmable segments, ±1°C accuracy standard, optional ±0.1°C |
| Furnace Structure | Dual-layer chamber, air cooling, alumina fiber insulation, automated bottom-loading |
| Pressure Control | Integrated vacuum and pressure monitoring, resistance vacuum gauge, micro-positive pressure 103,000–120,000 Pa |
| Gas Flow Control | Mass flow controller, 0–5000 sccm, programmable gas purging and protective gas introduction |
| Wafer Compatibility | Up to 6″ wafers (dependent on sample stage configuration) |
| Automation & Software | Multi-unit PC control, remote/local operation, robotic integration support, data logging |
대표적인 적용 분야
Ideal for rapid thermal processing in semiconductor wafer annealing, single-atom catalyst preparation, and materials heat treatment requiring precise atmosphere control and fast thermal cycling.
Supports research workflows demanding automated sample exchange and programmable thermal profiles with integrated vacuum and gas flow management.
구성 및 작동 안내
- The included water chiller (KJ5300) must be connected to the flange cooling system during operation to maintain sealing integrity.
- Optional vacuum pumps are available separately for reduced-pressure processing; verify vacuum requirements before ordering.
- Sample stage dimensions (standard 105 mm diameter with 76 × 58 mm recess) may require customization for full 6″ wafer processing.
- Automated chamber opening occurs at 300°C for sample exchange; ensure compatibility with sample and robotic safety protocols.
- Electrical supply must provide 208 VAC, three-phase, 50/60 Hz power at 18 kW capacity.
- Robotic arm integration is optional and sold separately for fully automated high-throughput workflows.
