OTF-1200X-II-PEC4SL-LD Multi-Zone Sliding Plasma-Enhanced CVD Furnace with 300W RF Generator, Gas Delivery & Vacuum Pump, Up to 1100°C
The OTF-1200X-II-PEC4SL-LD is engineered for precise plasma-enhanced chemical vapor deposition (PE-CVD) applications, particularly suited for fabricating nanowires, nanotubes, graphene, and thin films. Its innovative sliding furnace design allows the preheated furnace to be moved over or away from the sample, enabling rapid thermal cycling without waiting for the furnace body to heat or cool. This capability significantly accelerates experimental throughput and thermal process control.
The system incorporates multiple independently controlled heating zones, programmable with up to 30 segments each, allowing for temperature gradients up to 200°C. This feature supports specialized deposition profiles and thermal treatments. The furnace supports continuous operation up to 1100°C and is available in configurations with 2 or 3 heating zones and processing tube diameters of 2″, 3.14″, or 5″ to accommodate various sample sizes and process requirements.
주요 기능
- Sliding split-tube furnace enabling rapid sample heating and cooling without changing furnace temperature.
- 300W RF plasma generator at 13.56 MHz with automatic impedance matching and stable output power ±1%.
- Four-channel precision mass flow control system with touchscreen interface for independent gas flow management.
- Integrated vacuum pumping station with heavy-duty two-stage rotary vane pump achieving ~10-2 torr vacuum.
- Corrosion-resistant digital vacuum gauge with wide measurement range and plug-and-play sensor element.
- Programmable digital temperature controllers with 30 segments per zone for complex thermal profiles.
- Multiple furnace configurations with 2 or 3 heating zones and tube diameters from 2″ to 5″.
기술 사양
| 매개변수 | 사양 |
|---|---|
| Maximum Continuous Operating Temperature | 1100°C |
| Heating Zones | 2 or 3 independently controlled zones |
| Temperature Controllers | Programmable, 30 segments per controller |
| RF Plasma Generator Power | 5–300W adjustable |
| RF Frequency | 13.56 MHz |
| 진공 펌프 | Two-stage rotary vane, 7.8 CFM (240 L/min) |
| Vacuum Pressure Range | ~10-2 torr achievable |
| Mass Flow Controller Channels | 4 independent channels with ranges 0–499 SCCM |
| Input Voltage | AC 208–240V, single phase |
| Maximum Input Power | 4 kW |
대표적인 적용 분야
Ideal for research and development of nanostructured materials such as carbon and ZnO nanowires, nanotubes, graphene layers, and other thin films requiring plasma-enhanced chemical vapor deposition under controlled temperature gradients and vacuum conditions.
구성 및 작동 안내
The system includes a sliding furnace assembly mounted on rails, a 300W RF plasma generator with automatic impedance matching, a four-channel mass flow controller integrated on a mobile cart, and a vacuum pumping station with stainless steel piping and isolation valves. Optional accessories include bubblers or evaporators for liquid precursors and vacuum pressure control modules.
Users should install a two-stage pressure regulator on gas cylinders to maintain supply pressure below 3 PSI and limit gas flow rates to under 200 SCCM to prevent thermal shock to quartz processing tubes. Vacuum operation is recommended up to 1000°C for quartz tubes. For processing tubes larger than 4″, maintain a safe distance from the plasma source during operation. Remote temperature control via RS485 and compatible PC software is supported but PC is not included.
