OTF1200XS5 1200°C Max 5-Inch Split Vacuum Tube Furnace with 12-Inch Heating Zone and Separated Controller
The OTF1200XS5 is engineered for laboratory applications requiring controlled vacuum or flowing gas heat treatment of samples, such as semiconductor wafers up to 4 inches in diameter. Its split tube design allows the temperature controller to be physically separated from the furnace chamber, enhancing operational safety and convenience during high-temperature processes.
This vacuum furnace utilizes a 5-inch outer diameter quartz tube with stainless steel vacuum sealing flanges on both ends, enabling reliable vacuum integrity down to 10-2 torr using a mechanical pump. The 12-inch (300 mm) single heating zone provides a uniform temperature environment, with a constant temperature zone length of up to 140 mm within ±2°C. The furnace is capable of reaching a maximum temperature of 1200°C for short durations and can maintain continuous operation at 1100°C.
주요 기능
- 5″ O.D. quartz tube (130 mm outer diameter, 120 mm inner diameter, 750 mm length) with stainless steel 304 vacuum flanges and double high-temperature silicone O-rings.
- Separated temperature controller with PID automatic control and 30 programmable heating and cooling segments, achieving ±1°C accuracy.
- Maximum heating rate up to 20°C per minute with built-in over-temperature and thermocouple failure protection.
- High-purity alumina fiber insulation and alumina-coated refractory ceramics for energy efficiency and durability.
- Vacuum system includes KF25 port for pump connection, mechanical vacuum gauge (-0.1 to 0.15 MPa), inlet valve, and thermocouple feed-through.
- Optional accessories include hinged flanges for easier sample loading, water-cooled flanges for high-temperature operation, additional temperature monitoring thermocouples, and PC control modules.
- Compatible with various crucibles and quartz blocks to optimize vacuum efficiency and sample cleanliness.
기술 사양
| 매개변수 | 사양 |
|---|---|
| 최고 기온 | 1200°C (up to 1 hour) |
| Continuous Operating Temperature | 1100°C |
| Heating Zone Length | 12″ (300 mm), single zone |
| Constant Temperature Zone Length | 100 mm (±1°C) or 140 mm (±2°C) |
| Heating Rate | ≤ 20°C/min |
| 온도 제어 | PID control via solid-state relay, 30 programmable steps |
| Temperature Accuracy | ±1°C |
| Heating Elements | Fe-Cr-Al alloy doped with Mo |
| Tube Dimensions | 5″ quartz tube (130 mm O.D. × 120 mm I.D. × 750 mm length) |
| Vacuum Flanges | SS 304 with double high-temp silicone O-rings, KF25 vacuum port |
| Power Supply | 220 VAC, 50/60 Hz, 3 kW |
대표적인 적용 분야
Ideal for annealing semiconductor wafers, thin film processing, material synthesis under vacuum or controlled atmosphere, and research requiring precise thermal profiles up to 1200°C.
구성 및 작동 안내
The furnace includes two fibrous ceramic tube blocks to minimize heat radiation; these must be fully inserted before heating. Optional hinged flanges facilitate sample loading, and water-cooled flanges support sustained high-temperature operation. Additional temperature monitoring thermocouples and PC control modules are available as upgrades. Proper vacuum sealing and use of compatible crucibles or quartz blocks enhance vacuum efficiency and sample cleanliness. The furnace is designed for safe operation with built-in over-temperature and thermocouple failure protections.
