OTF1200XRTP4 Compact Rapid Thermal Processing Tube Furnace with 1100°C Max Temperature and 50°C/s Heating Rate for Semiconductor and Solar Cell Annealing
The OTF1200XRTP4 is engineered to meet the demanding thermal annealing requirements of semiconductor wafers and solar cells up to 3 inches in diameter. This compact rapid thermal processing (RTP) tube furnace enables precise, high-speed heating cycles essential for optimizing material properties and device performance in research and production environments.
Utilizing eight 1 kW halogen light tubes as heating elements, the furnace achieves a maximum heating rate of 50°C per second, allowing rapid temperature ramp-up to a peak of 1100°C for short durations. The system incorporates a 30-segment programmable temperature controller with ±1°C accuracy, supporting complex temperature profiles including ramping, dwelling, and cooling phases. Integrated RS485 communication and control software facilitate real-time temperature monitoring and profile management via PC.
Wichtigste Merkmale
- Maximum temperature of 1100°C for short-term annealing (up to 10 minutes) with controlled cooling options.
- Eight 1 kW halogen light tubes provide uniform heating over a 12″ zone with a 4″ constant temperature region.
- High-purity fibrous alumina insulation and double-layer steel casing with air cooling maintain surface temperature below 60°C.
- 30-segment PID temperature controller with auto-tune and over-temperature/thermocouple failure alarms.
- Quartz tube (4.33″ O.D x 4.05″ I.D x 16.2″ length) and removable 3″ diameter aluminum nitride sample holder included for optimal thermal uniformity.
- Vacuum-compatible design with stainless steel KF-D25 flange, water cooling jacket, and optional vacuum pump support.
- RS485 port and control software enable PC-based temperature profile monitoring and control.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Höchsttemperatur | 1100°C (max 10 min), 1000°C (max 20 min), 800°C (max 120 min), 600°C continuous |
| Erwärmungsgeschwindigkeit | Up to 50°C/s (recommended 5°C/s up to 1000°C) |
| Abkühlgeschwindigkeit | Max 60°C/min under vacuum (200 mTorr), 117°C/min atmospheric; minimum 10°C/min |
| Heizelemente | 8 × 1 kW halogen light tubes (10 mm dia × 300 mm length, heated length 200 mm) |
| Temperaturregler | FA-YD808P-AG PID controller, 30 programmable segments, ±1°C accuracy, RS485 port |
| Quartz Tube | 4.33″ O.D × 4.05″ I.D × 16.2″ length |
| Sample Holder | 3″ diameter aluminum nitride plate (removable); optional graphite substrate available |
| Leistungsaufnahme | 208-240 V AC, 50/60 Hz, single-phase, max 9 kW (60 A breaker required) |
| Vacuum Flange | KF-D25 stainless steel flange with double high-temp silicone O-rings, water cooling jacket |
Typische Anwendungsbereiche
Ideal for rapid thermal annealing of semiconductor wafers and solar cells, thin-film photovoltaics, graphene processing, and other advanced materials research requiring precise temperature control and rapid heating/cooling cycles.
Hinweise zur Konfiguration und zum Betrieb
The furnace includes a quartz tube, aluminum nitride sample holder, digital vacuum gauge, vacuum ball valve, and necessary O-rings and clamps. Optional accessories include vacuum pumps, water cooling chillers, alternative sample substrates, and advanced temperature controllers with PC software. Water cooling is required for extended operation above 600°C, with recommended flow rates and temperature limits to protect sealing components. Gas flow should be regulated below 3 PSI with a two-stage pressure regulator for safety. The system can be modified for reactive thermal epitaxy (RTE), chemical surface synthesis (CSS), or hot-plate chemical vapor deposition (HPCVD) applications with appropriate crucibles and coatings.
