OTF1200X4RTP130 Rapid Thermal Processing Tube Furnace for ≤4″ Wafers with 1000°C Max, 50ºC/s Heating Rate and Atmosphere Control
The OTF1200X4RTP130 is engineered for rapid thermal processing tasks involving wafers up to 4 inches in diameter. It supports operations under vacuum or controlled atmospheres, enabling precise thermal treatments essential for semiconductor, thin film, and materials research applications. This compact tube furnace is optimized for fast heating cycles, allowing temperature ramp-up rates up to 50ºC per second, reaching a maximum temperature of 1000°C for short durations.
Heating is achieved through 12 shortwave 2 kW halogen lamps arranged to provide uniform temperature distribution within a 320 mm heating zone, maintaining ±5ºC uniformity over a 4-inch constant temperature region. The furnace is equipped with a 30-segment programmable PID temperature controller offering ±1ºC accuracy, enabling complex temperature profiles including ramping, dwelling, and cooling steps. Real-time monitoring and control are facilitated via an RS485 communication port and dedicated PC software.
Wichtigste Merkmale
- Maximum operating temperature of 1000°C sustained for up to 10 minutes.
- Rapid heating rate up to 50ºC/s with 12 halogen lamps totaling 24 kW power input.
- Double-layer steel casing with air cooling keeps external surface below 60°C for safety.
- Quartz tube (130 mm OD x 120 mm ID x 600 mm length) with slideable 4″ sample holder and optional AlN or graphite discs.
- Vacuum flange with stainless steel construction, double high-temperature silicone O-rings, needle valves, and water-cooling jacket.
- Integrated digital vacuum gauge (10^-4 to 1000 Torr) and flow meter (16-160 ml/min) for gas atmosphere control.
- Safety interlock on split cover cuts power if opened during heating cycle.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Höchsttemperatur | 1000°C (up to 10 minutes) |
| Erwärmungsgeschwindigkeit | Up to 50ºC/s (recommended 5ºC/s) |
| Abkühlgeschwindigkeit | Max 50ºC/min (1000°C to 350°C) |
| Heizelemente | 12 × 2 kW shortwave halogen lamps |
| Leistungsaufnahme | 208-240 VAC, 50/60 Hz, three-phase, max 24 kW (80A breaker required) |
| Temperaturregler | FA-YD808P-AG PID controller, 30 programmable segments, ±1ºC accuracy, RS485 port |
| Thermoelement | K-type, contacts AlN sample holder from below |
| Quartz Tube Dimensions | 130 mm OD × 120 mm ID × 600 mm length |
| Vakuumfähigkeit | Down to 10^-4 Torr with turbo pump (pump not included) |
| Kühlung | 16 L/min recirculating water chiller included |
| Gas Flow Control | Flow meter 16-160 ml/min installed |
Typische Anwendungsbereiche
Ideal for rapid thermal annealing, oxidation, diffusion, and chemical vapor deposition processes on semiconductor wafers and thin films. Suitable for research on graphene, photovoltaics, and advanced materials requiring precise temperature control and atmosphere management.
Hinweise zur Konfiguration und zum Betrieb
The furnace includes a split cover with interlock safety to prevent operation when open. Optional upgrades include advanced temperature controllers and software packages for enhanced control and data logging. The quartz tube and sample holder are replaceable consumables. Gas pressure regulators must limit input pressure below 3 PSI for safe operation. Vacuum pumps and additional accessories are sold separately.
