OTF-1200X-ALD Dual-Zone Tube Furnace System with ALD and PECVD Capabilities, Up to 1200°C
The OTF-1200X-ALD is engineered for sophisticated thin film fabrication tasks, particularly atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD). It addresses the need for precise temperature control and reactive gas environments essential for producing next-generation ultra-thin films and two-dimensional transition metal dichalcogenide (TMD) materials.
This system integrates a dual-zone tube furnace design allowing either a thermal gradient or an extended uniform temperature zone up to 1100°C. The sliding furnace mechanism enables rapid heating and cooling by moving the heated zone relative to the sample, facilitating efficient thermal processing. The system supports optional ALD valves with minimum pulse durations of 10 ms and an inductively coupled plasma module for PECVD applications.
Wichtigste Merkmale
- Dual heating zones each 200 mm in length, total heating length 400 mm, with up to 300 mm constant temperature zone.
- Maximum operating temperature of 1100°C for both main and preheating tube furnaces.
- Optional ALD system with two 10 ms pulse valves controlled via PLC and 6″ touchscreen interface.
- Inductively coupled plasma generator for PECVD with adjustable RF power from 5 to 300 W and automatic matching.
- Sliding furnace mechanism enabling programmable furnace movement for rapid thermal cycling.
- Optional gas mixing system with four mass flow controllers for precise gas composition control.
- Preheating furnace with 200 mm length and programmable temperature control for solid precursor sublimation.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Maximum Temperature (Main & Preheating Furnace) | 1100°C |
| Heizzonen | 2 zones, 200 mm each, 400 mm total length |
| Konstanttemperaturzone | Up to 300 mm (if both zones set identically) |
| Power Supply (Main Furnace) | 208-240 VAC, 20 A, 50/60 Hz, 3 kVA |
| Power Supply (Preheating Furnace) | 120 VAC, 15 A, 50/60 Hz, 1.2 kVA or 208-240 VAC, 10 A, 50/60 Hz, 1.5 kVA |
| Plasma Generator Power | 208-240 VAC, 2.5 A, 50/60 Hz, 0.5 kVA |
| Plasma RF Power Output | 5–300 W adjustable, 13.56 MHz ±0.005% |
| ALD Valves | Two valves with minimum 10 ms pulse duration (optional) |
| Quartz Tube Dimensions | 50 mm OD × 44 mm ID × 2200 mm L (80 mm OD optional) |
| Temperature Controllers | Two programmable digital controllers with 50 segments each |
| Erwärmungsgeschwindigkeit | Up to 15°C/sec (varies by temperature range) |
| Abkühlgeschwindigkeit | Up to 15°C/sec (varies by temperature range) |
Typische Anwendungsbereiche
Ideal for research and development of ultra-thin films, 2D materials such as TMDs, and advanced semiconductor coatings requiring precise temperature gradients and plasma-enhanced deposition.
Supports atomic layer deposition processes with precise precursor pulsing and plasma-enhanced chemical vapor deposition for enhanced film quality and composition control.
Hinweise zur Konfiguration und zum Betrieb
- Optional accessories include ALD valve system, gas mixing system with mass flow controllers, liquid vapor generator, and vacuum pumping stations.
- PLC-based control with 6″ touchscreen interface manages vapor, ALD, and plasma parameters for integrated process control.
- Sliding furnace movement is programmable but limited to a single directional move per program to enable rapid thermal cycling.
- Preheating furnace is optimized for solid precursor sublimation with programmable temperature profiles.
- System includes anti-corrosive pressure gauge suitable for a wide vacuum range and various gas types.
