OTF-1200X-ALD Dual-Zone Tube Furnace System with ALD and PECVD Capabilities, Up to 1200°C
The OTF-1200X-ALD is engineered to support sophisticated thin film fabrication tasks, particularly atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD). It is ideal for researchers and developers working on next-generation materials such as two-dimensional transition metal dichalcogenides (2D TMDs) and ultra-thin films requiring precise thermal and plasma environments.
This system integrates a dual-zone tube furnace design that enables either a controlled thermal gradient or an extended uniform temperature zone up to 1100°C. The sliding furnace mechanism facilitates rapid heating and cooling by moving the heated zone relative to the sample, enhancing process efficiency and temperature control.
Wichtigste Merkmale
- Dual heating zones with programmable digital controllers supporting up to 50 temperature segments each.
- Optional ALD system with two 10 ms pulse valves for precise atomic layer deposition control.
- Inductively coupled plasma generation module for PECVD processes with adjustable RF power from 5 to 300 W.
- Preheating tube furnace with independent temperature control, suitable for solid precursor sublimation.
- Sliding furnace mechanism enabling programmable furnace movement for rapid thermal cycling.
- Optional gas mixing system with four mass flow controllers for customized gas delivery.
- Anti-corrosive pressure gauge covering a wide vacuum range, compatible with various gases.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Maximum Temperature (Tube & Preheating Furnace) | 1100°C |
| Heizzonen | Dual zones, 200 mm each; total 400 mm heating length |
| Konstanttemperaturzone | 300 mm central zone when both zones set identically |
| Power Supply (Main Tube Furnace) | 208-240 VAC, 20 A, 50/60 Hz, 3 kVA |
| Power Supply (Preheating Furnace) | 120 VAC, 15 A, 50/60 Hz, 1.2 kVA or 208-240 VAC, 10 A, 50/60 Hz, 1.5 kVA |
| Plasma Generator Power | 208-240 VAC, 2.5 A, 50/60 Hz, 0.5 kVA; RF frequency 13.56 MHz ±0.005% |
| RF Output Power Range | 5 – 300 W adjustable with ±1% stability |
| Erwärmungsgeschwindigkeit | Up to 15°C/sec (RT to 150°C), decreasing at higher temperatures |
| Abkühlgeschwindigkeit | Up to 15°C/sec (1000°C to 950°C), decreasing at lower temperatures |
| Quartz Tube Dimensions | 50 mm OD x 44 mm ID x 2200 mm length (80 mm OD optional) |
| Control Interface | PLC with 6″ touchscreen; remote control via RS485 and MTS03 software |
Typische Anwendungsbereiche
This system is suited for research and development in thin film deposition, including atomic layer deposition of ultra-thin films, plasma-enhanced chemical vapor deposition, and growth of two-dimensional materials such as TMDs. It supports processes requiring precise thermal gradients and plasma environments.
Hinweise zur Konfiguration und zum Betrieb
Optional components include a gas mixing system with mass flow controllers, liquid vapor generators for precursor delivery, and vacuum pumping stations with turbomolecular or rotary vane pumps. The furnace sliding mechanism allows programmable movement for rapid thermal cycling but moves only once per program in a single direction. Users should preheat the furnace to target temperatures before sliding to achieve maximum heating rates.
