OTF-1200X 1200°C Tube Furnace with Integrated Ultrasonic Mist System for Epitaxial Thin Film and Single Crystal Growth via Mist CVD
The OTF-1200X is engineered for advanced laboratory applications requiring precise epitaxial thin film and single crystal growth through the mist chemical vapor deposition (Mist CVD) technique, also known as aerosol-assisted chemical vapor deposition (AACVD). This system addresses the challenge of delivering uniform precursor mist and controlled thermal environments necessary for high-quality film and crystal formation.
At its core, the OTF-1200X features a split tube furnace capable of reaching temperatures up to 1200°C, with a 400 mm heating zone and a 125 mm constant temperature zone. The furnace temperature is controlled by a 30-segment programmable controller with ±1°C accuracy, ensuring stable and repeatable thermal conditions. The quartz processing tube included has an outer diameter of 60 mm, inner diameter of 54 mm, and length of 1000 mm, accommodating substrates held at a 45-degree angle on a quartz sample holder designed for up to four 10x10x0.5 mm pieces.
Wichtigste Merkmale
- Integrated 1.7 MHz ultrasonic mist generator housed in an airtight SS316 stainless steel tank with four adjustable power levels for precise mist control.
- Equipped with a liquid syringe pump and 60 ml plastic syringe, enabling automatic precursor injection at flow rates from 0.004 ml/min to 70 ml/min.
- 4-channel mass flow controller (MFC) gas delivery system for accurate mixing and delivery of carrier and diluting gases, with flow rates adjustable up to 500 ml/min and ±0.2% full scale accuracy.
- Touch screen control panel for setting temperature programs, gas flow rates, mist generation levels, and timing, with optional RS-485 communication and PC software interface.
- Vacuum port with KF 25 flange and valve for optional connection to a vacuum pump, recommended to use a dry pump for extended system life.
- Quartz tube and sample holder included; spare parts available separately.
- CE certified with optional NRTL or CSA certification available.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Maximale Betriebstemperatur | 1200°C (upgradeable to 1500°C with OTF-1500X-UL) |
| Heating Zone Length | 400 mm total, 125 mm constant temperature zone |
| Temperaturregler | 30 segments programmable, ±1°C accuracy |
| Stromversorgung | 3 kW, 220 VAC ±10%, single phase, 50/60 Hz |
| Quartz Tube Dimensions | OD 60 mm × ID 54 mm × Length 1000 mm |
| Sample Holder Capacity | Holds 4 substrates, each 10×10×0.5 mm, positioned at 45° |
| Ultrasonic Mist Generator Frequency | 1.7 MHz |
| Mist Generation Time | Adjustable from 30 to 180 minutes |
| Liquid Injection Pump Flow Rate | 0.004 ml/min to 70 ml/min |
| MFC Channels | 4 channels for gas mixing and delivery |
| MFC Flow Rate Range | 0 to 500 ml/min |
| MFC Flow Accuracy | ±0.2% full scale |
| Working Pressure Range | 0.1 to 0.5 MPa |
| Vakuumanschluss | KF 25 flange with valve for vacuum pump connection (optional) |
| Control Interface | Touch screen panel; RS-485 and PC software optional |
Typische Anwendungsbereiche
The OTF-1200X is suitable for growing high-quality epitaxial films and single crystals such as Ga2O3 using the mist CVD method. It supports research and development in semiconductor materials, thin film deposition, and crystal growth for electronic and optoelectronic devices.
Hinweise zur Konfiguration und zum Betrieb
The system includes the tube furnace, quartz tube with flanges, quartz sample holder, ultrasonic mist generator with syringe pump, and a 4-channel MFC gas delivery station. A vacuum pump is optional but recommended to prolong the ultrasonic mist generator’s service life; a dry pump is preferred. Replacement consumables such as processing tubes and O-rings are available separately. Operators should ensure proper gas handling and follow safety protocols when working with precursor chemicals and high temperatures.
