ALD-800X-4-PE Compact Plasma Enhanced Atomic Layer Deposition System with 4″ Rotary Heatable Sample Stage and 300W RF Generator
The ALD-800X-4-PE system is engineered for advanced thin film deposition tasks requiring precise control over film uniformity and composition. It is particularly suited for depositing conformal coatings on heat-sensitive materials by leveraging plasma-enhanced atomic layer deposition technology. The system’s rotary heatable sample stage ensures uniform precursor exposure and film thickness across 4-inch substrates.
This PE-ALD system integrates a 300 W radio frequency (RF) generator and five high-frequency ALD valves capable of microsecond pulse precision, enabling fine control over precursor delivery and plasma generation. Operating temperatures can reach up to 800°C; however, practical use is recommended below 550°C to avoid precursor deposition issues. The system is controlled via a 6-inch touchscreen PLC panel or laptop software, allowing adjustment of parameters such as pulse timing, gas flow, stage rotation speed, and heating temperatures.
Wichtigste Merkmale
- 4″ diameter rotary sample stage with adjustable rotation speed (0-5 RPM) and heating capability for uniform film deposition.
- 300 W RF plasma generator operating at 13.56 MHz with automatic matching for stable plasma-enhanced ALD processes.
- Five high-frequency ALD valves with microsecond pulse control and maximum switching frequency of 283 Hz.
- 6″ touchscreen PLC control panel enabling precise adjustment of vapor pulse time, gas flow rates, stage rotation, and heating temperatures.
- Quartz glass reaction chamber with stainless steel flanges supporting vacuum levels down to 10-5 torr via turbopump.
- Two 150 ml heatable bubblers with temperature controllers for accurate precursor vapor delivery.
- Wide precursor compatibility and operational temperature range, optimized for heat-sensitive materials at low temperatures.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Stromversorgung | 208-240 VAC, single phase, 50/60 Hz |
| Gesamtstromverbrauch | 9.5 kW (for heating and plasma operation) |
| RF Plasma Generator | 13.56 MHz, 100 W max, auto-matching |
| ALD Valves | Five high-frequency valves, max switching frequency 283 Hz, min pulse time 10 ms |
| Sample Stage Diameter | 4 Zoll |
| Sample Stage Rotation Speed | 0-5 RPM adjustable |
| Sample Stage Operating Temperature | Up to 800°C (recommended < 550°C ±5°C) |
| Kammermaterial | Quartz glass tube with SS 304 flanges |
| Vakuumniveau | 10-5 torr (turbopump), 10-2 torr (mechanical pump) |
| Bubbler Capacity | Two 150 ml heatable bubblers with temperature control |
| Control Interface | 6″ touchscreen PLC panel and laptop software |
Typische Anwendungsbereiche
The ALD-800X-4-PE system is ideal for depositing ultra-thin, conformal coatings on semiconductor wafers, optical components, and heat-sensitive substrates. It supports research and development in microelectronics, photovoltaics, and advanced materials requiring precise atomic layer control and plasma-enhanced surface reactions.
Hinweise zur Konfiguration und zum Betrieb
The system includes two heatable bubblers for precursor delivery; additional bubblers or vacuum pumps are optional and can be ordered separately. Users should monitor and maintain vacuum levels using appropriate turbopumps or mechanical pumps. Operating temperature should be limited below 550°C to prevent precursor condensation and deposition issues. The control panel allows fine tuning of all process parameters to optimize film quality.
