OTF-1200X-S-MIST Compact Mist CVD Furnace for Epitaxial Thin-Film and Crystal Growth up to 1200°C
The OTF-1200X-S-MIST is engineered to support advanced research in epitaxial thin-film deposition and crystal growth, particularly for gallium oxide (Ga2O3) materials. This compact system employs aerosol-assisted chemical vapor deposition (AACVD), where liquid precursors are ultrasonically atomized into a fine mist and transported into a heated quartz tube for controlled deposition onto substrates.
The system integrates a split tube furnace capable of reaching 1200°C with precise temperature control, a 1.7 MHz ultrasonic mist generator housed in a stainless steel tank, and an automatic syringe pump for liquid precursor delivery. The quartz processing tube and sample holder accommodate up to four substrates positioned at a 45° angle, optimizing exposure to the aerosol for uniform film growth.
Wichtigste Merkmale
- Split tube furnace with maximum working temperature of 1200°C and programmable 30-segment temperature control with ±1°C accuracy.
- 1.7 MHz ultrasonic mist generator with three adjustable power levels and seven timer settings for controlled aerosol production.
- Automatic liquid precursor injection via syringe pump with adjustable flow rates from 0.004 to 70 mL/min, matched to ultrasonic power output.
- High-purity quartz processing tube (60 mm outer diameter, 55 mm inner diameter, 600 mm length) with vacuum flanges and KF25 vacuum port with valve.
- Quartz sample holder designed for four substrates (10 × 10 × 0.5 mm) held at a 45° angle inside the processing tube.
- Two-channel gas delivery system with floating-type flowmeters (16–160 mL/min range), stainless steel gas mixing tank, and vacuum needle valves for precise gas control.
- Optional mist generator heating function up to 250°C and optional dry vacuum pump for enhanced process control.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Furnace Model | OTF-1200X-S |
| Maximum Furnace Temperature | 1200°C |
| Heating Zone Length | 200 mm total, 60 mm constant-temperature zone |
| Genauigkeit der Temperaturregelung | ±1 °C |
| Furnace Power Rating | 1.2 kW |
| Eingangsspannung | 120 V AC ±10%, Single Phase, 50/60 Hz |
| Processing Tube Material | Quartz |
| Processing Tube Dimensions | 60 mm OD, 55 mm ID, 600 mm length |
| Sample Holder Capacity | Four substrates (10 × 10 × 0.5 mm each) |
| Ultrasonic Mist Generator Frequency | 1.7 MHz |
| Ultrasonic Power Levels | Three adjustable levels (Low, Medium, High) |
| Liquid Injection Rate | 0.004–70 mL/min (recommended 0.2–0.6 mL/min depending on power level) |
| Gas Flowmeters | Two floating-type, 16–160 mL/min range |
| Gas Mixing Tank | Integrated stainless steel tank |
| Vakuumanschluss | KF25 with valve on processing tube flange |
Typische Anwendungsbereiche
This system is tailored for research on gallium oxide (Ga2O3) thin films and crystal growth using aerosol-assisted deposition methods. It supports epitaxial film growth on substrates such as magnesium aluminate spinel (MgAl2O4), facilitating studies in semiconductor materials and advanced oxide electronics.
Hinweise zur Konfiguration und zum Betrieb
The OTF-1200X-S-MIST includes the split tube furnace, ultrasonic mist generator, syringe pump with a 20 mL syringe, quartz processing tube with vacuum flanges, quartz sample holder, and two-channel gas delivery system. Optional accessories include a dry vacuum pump recommended for extended service life and an optional heating function for the mist generator up to 250°C. Proper matching of liquid injection rates to ultrasonic power settings is essential for effective atomization. The system is CE certified, with additional certifications available upon request.
