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OTF-1100X-II-XX Two-Zone Tube Furnace with Optional 11″ to 15″ Quartz Tube, 1200°C Max Temperature, and Vacuum Flanges

Designed for precise thermal processing including CVD and film growth of 2D materials.
Features two 450 mm heating zones with ±1°C PID temperature control accuracy.
Maximum operating temperature of 1200°C with optional quartz tubes from 11" to 15" OD.
Equipped with vacuum flanges, needle valves, and electrical lid actuator for ease of use.

Konformität: CE-zertifiziert
Maßgeschneidert: OEM/ODM
Verpackung: Sperrholzkiste

Produkte

OTF-1100X-II-XX Two-Zone Tube Furnace with Optional Quartz Tube and Vacuum Flanges

The OTF-1100X-II-XX tube furnace is engineered for advanced laboratory thermal processing tasks such as chemical vapor deposition (CVD) and diffusion annealing, particularly suited for film growth of two-dimensional transition metal dichalcogenides (TMDs). It accommodates wafer sizes up to 12″ with an optional quartz tube diameter of 11″ or 15″ and integrates vacuum flanges for controlled atmosphere processing.

This model features two independently controlled heating zones, each 450 mm in length, providing a total heating zone length of 900 mm. The furnace employs a microprocessor-based PID control system with three K-type thermocouples, delivering precise temperature regulation within ±1°C and minimizing overshoot. The electrical lid actuator facilitates convenient and safe sample loading and unloading.

Wichtigste Merkmale

  • Maximum operating temperature of 1200°C with heating and cooling rates up to 10°C/min.
  • Double-layer steel casing with air cooling keeps external surface temperature below 70°C.
  • Optional high-purity fused quartz tubes available in 11″ or 15″ outer diameter and 71″ length.
  • Vacuum sealing flanges with stainless steel needle valves and silicon O-rings enable vacuum levels down to 10^-2 torr.
  • Three 30-segment programmable digital controllers with PID and self-tuning functions.
  • Hinged-type water-cooled flange and fibrous ceramic tube blocks reduce heat radiation and facilitate sample handling.
  • Optional PC control software and Eurotherm controllers available for enhanced temperature accuracy and data management.

Technische Daten

Parameter Spezifikation
Höchsttemperatur 1200°C
Heizzonen Two zones, each 450 mm (900 mm total)
Temperaturregelung Three K-type thermocouples, PID control, ±1°C accuracy
Heizelemente 36 SiC heating elements
Tube Options Fused quartz tubes, 11″ or 15″ OD, 71″ length
Vakuumfähigkeit Vacuum flanges with stainless steel needle valves; vacuum down to 10^-2 torr
Stromversorgung Three-phase 460V ±10%, 50/60 Hz (380V optional)
Stromverbrauch Maximum 50 kW
Kühlung Air cooling with double-layer steel casing

Typische Anwendungsbereiche

This tube furnace is widely used for chemical vapor deposition (CVD) processes, annealing, and diffusion treatments of semiconductor wafers up to 12″ diameter. It is particularly suitable for research and development involving two-dimensional materials such as transition metal dichalcogenides (TMDs) and thin film growth requiring precise temperature control and vacuum environment.

Hinweise zur Konfiguration und zum Betrieb

The furnace includes needle valves, vacuum gauges, and stainless steel vacuum flanges with silicon O-rings for vacuum sealing. An electrical actuator facilitates easy lid opening. Optional accessories include PC control software, Eurotherm controllers for enhanced temperature accuracy, calibration kits, quartz boats, and turbopumps for high vacuum applications down to 10^-5 torr.

Users should handle quartz tubes with care due to their fragility. The furnace is designed for vacuum or low-pressure operation below 0.2 bar and safe gas flow rates under 200 SCCM to prevent thermal shock. A two-stage pressure regulator is recommended to limit gas cylinder pressure below 3 PSI for safe operation.

Produktbezogene Informationen

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OTF-1200X-VT-III-50 laboratory product view 1
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