VTC-3RF Three-Head 1″ RF Plasma Magnetron Sputtering Coater with Optional DC Magnetron Sputtering for Multilayer Oxide and Metallic Thin Films
The VTC-3RF is engineered for research and development of multilayer oxide thin films on non-metallic substrates, addressing the need for precise and cost-effective thin film deposition. Its design facilitates the coating of oxide single crystal substrates without requiring ultra-high vacuum conditions, making it suitable for oxide thin film studies and applications.
This system features three 1″ RF plasma magnetron sputtering heads integrated into a high-purity quartz vacuum chamber. The coater supports flexible sputtering configurations, including an optional DC magnetron sputtering power supply, enabling combinations of RF and DC heads for metallic or oxide film deposition. The sample holder is rotatable and heatable, allowing uniform coatings at temperatures up to 600 °C.
Key Features
- Three 1″ magnetron sputtering heads with water cooling jackets for stable plasma operation.
- 13.5 MHz, 100 W RF generator with manual matching; optional 300 W auto-match RF generator available.
- Optional 500 W DC power supply enables mixed RF/DC sputtering head configurations.
- Quartz vacuum chamber (256 mm OD x 238 mm ID x 276 mm height) with aluminum sealing flange and silicone O-ring.
- Rotatable and heatable ceramic sample holder (50 mm diameter) with temperature control up to 600 °C and adjustable rotation speed (1–10 rpm).
- Included 10 L/min recirculating water chiller for sputtering head cooling.
- Flexible sputtering target options: 1″ diameter, up to 1/8″ thickness; includes Cu and Al2O3 targets for demonstration.
Technical Specifications
| Parameter | Specification |
|---|---|
| Input Power | Single-phase 220 VAC ±10%, 50/60 Hz, 1000 W (including vacuum pump and chiller); optional 1500 W transformer for 110 V |
| RF Power Source | 13.56 MHz, 100 W continuous (manual matching); optional 300 W auto-match generator |
| DC Power Supply (Optional) | 500 W for metallic film deposition and mixed sputtering configurations |
| Sputtering Heads | Three 1″ magnetron heads with water cooling jackets; quick clamp mounting into quartz chamber |
| Vacuum Chamber | Quartz, 256 mm OD × 238 mm ID × 276 mm height; aluminum flange with silicone O-ring; stainless steel RF shield cage |
| Vacuum Level | 1.0E-2 Torr with included dual-stage mechanical pump; 1.0E-5 Torr achievable with optional turbopump |
| Sample Holder | Rotatable ceramic heater stage, 50 mm diameter, max 2″ wafer; temperature adjustable RT to 600 °C; rotation 1–10 rpm |
| Sputtering Target | 1″ diameter × 1/8″ thickness max; includes Cu and Al2O3 targets; adjustable sputtering distance 50–80 mm; angle 0–25° |
| Cooling | 10 L/min recirculating water chiller for sputtering heads |
Typical Applications
Ideal for research on multilayer oxide thin films on oxide single crystal substrates, including ZnO deposition on Al2O3. Also adaptable for metallic thin film deposition with optional DC sputtering. Suitable for academic and industrial thin film coating studies requiring precise control of film thickness and composition.
Configuration & Operating Notes
The system can be configured with three DC, one RF/two DC, or two RF/one DC sputtering heads by adding the optional DC power supply. A precision quartz thickness sensor and remote PC control modules are available as options for enhanced process monitoring and control. Reactive sputtering with N2 or O2 gases is supported with an optional gas mixing station. Safety precautions require shutting down the RF generator before sample loading or target changes due to high voltage on sputtering heads.
