OTF-1200X-III-SHG 24-Inch Three-Zone Tube Furnace with Hinged Flange and Quartz Tube, Up to 1200°C
The OTF-1200X-III-SHG is engineered for advanced laboratory processes requiring precise thermal treatment such as annealing, diffusion, and sintering in various gas atmospheres. Its design accommodates vacuum or low-pressure environments below 0.12 MPa absolute pressure, making it suitable for sensitive material synthesis and processing tasks including semiconductor wafer treatments up to 4 inches in diameter.
This tube furnace features a 24-inch (610 mm) heating length divided into three independently controlled zones (6″ + 12″ + 6″) to establish uniform or gradient temperature profiles. The hinged flange design facilitates straightforward sample loading and unloading, enhancing operational efficiency. The furnace is equipped with a fused quartz tube available in multiple diameters (80 mm, 101 mm, 130 mm outer diameter) to match specific sample size requirements and maintain a clean processing environment.
Key Features
- Three-zone heating with microprocessor-based PID control ensures ±1°C temperature accuracy and prevents overshoot.
- Maximum operating temperature of 1200°C under flowing gas; continuous operation up to 1100°C; vacuum limit up to 1000°C.
- Double-layer steel casing with cooling fans and high-purity alumina fiber insulation for energy efficiency and low surface temperature.
- Hinged flanges on both ends with KF25D adapter and precision digital vacuum gauge for easy vacuum and gas atmosphere control.
- Selectable fused quartz tubes compatible with wafers up to 4 inches; ceramic tube blocks included to reduce heat radiation.
- PID controller supports 30 programmable segments with built-in over-temperature and thermocouple failure protections.
- Optional PC control module with RS485 communication for remote operation and recipe management.
Technical Specifications
| Parameter | Specification |
|---|---|
| Model | OTF-1200X-III-SHG |
| Heating Zones | 3 zones (6″ + 12″ + 6″; total 610 mm) |
| Max Temperature (Flowing Gas) | 1200°C |
| Continuous Max Temperature (Flowing Gas) | 1100°C |
| Max Temperature (Vacuum) | 1000°C |
| Max Heating Rate | 20°C/min |
| Temperature Control | Microprocessor PID with 30 programmable segments, ±1°C accuracy |
| Thermocouples | Three K-type (one per zone) |
| Heating Elements | Fe-Cr-Al alloy doped with Mo |
| Power Supply | AC 208-240V, Single Phase, 50/60 Hz (40A breaker required) |
| Power Consumption | 6 kW max |
| Furnace Insulation | High purity fibrous alumina |
| Tube Options (Quartz) | 80 mm, 101 mm, or 130 mm outer diameter; 1200 mm length |
| Vacuum Flange | Hinged type with KF25D adapter and digital vacuum gauge |
| Max Vacuum Pressure | 10^-2 torr (mechanical pump), 10^-5 torr (molecular pump) |
Typical Applications
This tube furnace is ideal for material research and development tasks such as semiconductor wafer annealing, chemical vapor deposition (CVD) precursor treatments, synthesis of doped materials like molybdenum disulfide, and other high-temperature processes requiring controlled atmospheres and precise temperature gradients.
Configuration & Operating Notes
The furnace includes two alumina fiber foam tube blocks to minimize heat radiation inside the tube, which must be fully inserted before heating. Quartz blocks are optionally available for enhanced cleanliness and vacuum performance. The hinged flange design simplifies sample exchange and vacuum sealing. A two-stage pressure regulator is recommended on gas cylinders to maintain safe operating pressures below 3 PSI.
Optional accessories include a computerized temperature control module (MTS-02) for PC operation, high vacuum pump stations, gas mixing systems, quartz sample holders, and remote wireless control. The furnace is CE certified, with NRTL or CSA certification available upon request.
