EQ-PCE-8 8.5″ RF Plasma Cleaner and Etcher with 12L Quartz Chamber, 0-80W Adjustable Power, and Integrated Vacuum Pump
The EQ-PCE-8 is engineered to address the challenge of removing nanoscale organic contaminants from substrates and wafers up to 8 inches in diameter. It is particularly suited for pre-cleaning single crystal substrates prior to epitaxial film deposition, enhancing film quality by ensuring a contaminant-free surface. The system also supports plasma etching processes at higher RF power settings, providing versatility for various laboratory surface treatment needs.
This plasma cleaner operates by generating a radio frequency (RF) plasma within a high purity quartz chamber measuring 8.5 inches outer diameter, 8.2 inches inner diameter, and 14 inches in length, with a total volume of 12 liters. The RF power is adjustable from 0 to 80 watts at a frequency of 13.56 MHz, allowing fine control over plasma intensity. The chamber features a hinged aluminum front flange and a 2.3-inch diameter quartz window for visual monitoring of the plasma process. The system is fully shielded to prevent RF radiation leakage.
주요 기능
- Variable RF power supply from 0 to 80 W at 13.56 MHz for precise plasma control.
- High purity quartz plasma chamber (8.5″ O.D. x 8.2″ I.D. x 14″ L) with 12-liter volume.
- Integrated 240 L/min heavy-duty rotary vane vacuum pump with exhaust filter, achieving ultimate pressure down to 50 mTorr.
- 6-inch color touchscreen control panel automates vacuum level, gas flow, RF power, and cleaning time.
- Built-in mass flow meter (0-500 ml/min) for accurate gas flow regulation within ±0.5 ml/min.
- Compatible with inert gases such as nitrogen, argon, and air; flammable gases are prohibited.
- Optional wafer holders and multi-channel gas delivery systems available for enhanced functionality.
기술 사양
| 매개변수 | 사양 |
|---|---|
| Input Power | AC 220V, 50/60 Hz |
| RF Power | 0 – 80 W adjustable, 13.56 MHz frequency |
| Plasma Chamber | 8.5″ O.D. x 8.2″ I.D. x 14″ L quartz, 12 L volume, hinged aluminum flange, 2.3″ quartz observation window |
| 진공 펌프 | 240 L/min rotary vane pump with exhaust filter, KF25D adaptor, ultimate pressure 50 mTorr |
| Control Panel | 6″ color touchscreen, automatic control of vacuum, gas flow, RF power, cleaning time |
| Gas Flow Meter | Mass flow meter 0-500 ml/min, accuracy ±0.5 ml/min |
| Operating Current | ≤ 3 A |
| Total Power Consumption | Up to 830 W max |
대표적인 적용 분야
Ideal for cleaning nanoscale organic residues on semiconductor wafers, glass substrates, and other materials prior to thin film deposition or lithography. Also suitable for plasma etching processes requiring controlled RF power. Commonly used in research labs focusing on epitaxial film growth, surface modification, and contamination removal.
구성 및 작동 안내
The system includes the plasma cleaner unit, integrated vacuum pump with exhaust filter, KF25D adaptor, and clamp for immediate operation. Optional accessories such as wafer quartz boats (2″ to 6″) and multi-channel gas delivery systems can be ordered separately to accommodate specific experimental setups. Users should avoid flammable gases and select inert gases appropriate for their material treatment. Recommended RF power settings for cleaning range from 10 to 30 W, while etching typically requires 35 to 80 W. Higher power RF supplies up to 300 W are available upon request.
