OTF-1200X-S-MIST Compact Mist CVD Furnace for Epitaxial Thin-Film and Crystal Growth up to 1200°C
The OTF-1200X-S-MIST is engineered to support advanced research in epitaxial thin-film deposition and crystal growth, particularly for gallium oxide (Ga2O3) materials. This compact system employs aerosol-assisted chemical vapor deposition (AACVD), where liquid precursors are ultrasonically atomized into a fine mist and transported into a heated quartz tube for controlled deposition onto substrates.
The system integrates a split tube furnace capable of reaching 1200°C with precise temperature control, a 1.7 MHz ultrasonic mist generator housed in a stainless steel tank, and an automatic syringe pump for liquid precursor delivery. The quartz processing tube and sample holder accommodate up to four substrates positioned at a 45° angle, optimizing exposure to the aerosol for uniform film growth.
주요 기능
- Split tube furnace with maximum working temperature of 1200°C and programmable 30-segment temperature control with ±1°C accuracy.
- 1.7 MHz ultrasonic mist generator with three adjustable power levels and seven timer settings for controlled aerosol production.
- Automatic liquid precursor injection via syringe pump with adjustable flow rates from 0.004 to 70 mL/min, matched to ultrasonic power output.
- High-purity quartz processing tube (60 mm outer diameter, 55 mm inner diameter, 600 mm length) with vacuum flanges and KF25 vacuum port with valve.
- Quartz sample holder designed for four substrates (10 × 10 × 0.5 mm) held at a 45° angle inside the processing tube.
- Two-channel gas delivery system with floating-type flowmeters (16–160 mL/min range), stainless steel gas mixing tank, and vacuum needle valves for precise gas control.
- Optional mist generator heating function up to 250°C and optional dry vacuum pump for enhanced process control.
기술 사양
| 매개변수 | 사양 |
|---|---|
| Furnace Model | OTF-1200X-S |
| Maximum Furnace Temperature | 1200°C |
| Heating Zone Length | 200 mm total, 60 mm constant-temperature zone |
| Temperature Control Accuracy | ±1°C |
| Furnace Power Rating | 1.2 kW |
| Input Voltage | 120 V AC ±10%, Single Phase, 50/60 Hz |
| Processing Tube Material | Quartz |
| Processing Tube Dimensions | 60 mm OD, 55 mm ID, 600 mm length |
| Sample Holder Capacity | Four substrates (10 × 10 × 0.5 mm each) |
| Ultrasonic Mist Generator Frequency | 1.7 MHz |
| Ultrasonic Power Levels | Three adjustable levels (Low, Medium, High) |
| Liquid Injection Rate | 0.004–70 mL/min (recommended 0.2–0.6 mL/min depending on power level) |
| Gas Flowmeters | Two floating-type, 16–160 mL/min range |
| Gas Mixing Tank | Integrated stainless steel tank |
| Vacuum Port | KF25 with valve on processing tube flange |
대표적인 적용 분야
This system is tailored for research on gallium oxide (Ga2O3) thin films and crystal growth using aerosol-assisted deposition methods. It supports epitaxial film growth on substrates such as magnesium aluminate spinel (MgAl2O4), facilitating studies in semiconductor materials and advanced oxide electronics.
구성 및 작동 안내
The OTF-1200X-S-MIST includes the split tube furnace, ultrasonic mist generator, syringe pump with a 20 mL syringe, quartz processing tube with vacuum flanges, quartz sample holder, and two-channel gas delivery system. Optional accessories include a dry vacuum pump recommended for extended service life and an optional heating function for the mist generator up to 250°C. Proper matching of liquid injection rates to ultrasonic power settings is essential for effective atomization. The system is CE certified, with additional certifications available upon request.
