OTF-1100X-III Three-Zone Tube Furnace with 11″ or 15″ Quartz Tube, Hinged Flanges, and Motorized Lid Actuators, Up to 1100°C
The OTF-1100X-III is engineered for advanced laboratory applications requiring precise thermal processing of bulk samples and wafers. It excels in tasks such as materials synthesis, wafer annealing, diffusion, and heat treatment under vacuum or controlled gas atmospheres. The furnace’s design supports continuous operation at temperatures up to 1100°C, with short-term capability up to 1200°C, providing flexibility for various thermal protocols.
This model incorporates a split tube structure with a choice of 11″ or 15″ outer diameter quartz tubes, each 73″ in length, facilitating compatibility with different sample sizes and experimental setups. The furnace lid is equipped with motorized actuators, enabling smooth and safe opening and closing. Temperature control is managed by three programmable PID controllers, allowing segmented temperature profiles with high stability and accuracy within ±1°C, ensuring uniform heating across the 900 mm total heating length.
주요 기능
- Three independently controlled heating zones of 300 mm each, providing a uniform 600 mm constant temperature zone within ±5°C at 800°C.
- Choice of 11″ or 15″ diameter quartz tubes with 73″ length for versatile sample accommodation.
- Motorized actuators for effortless and safe furnace lid operation.
- Programmable PID temperature controllers with 30 segments and RS-485 communication for precise temperature ramping and control.
- Double-layer steel casing with air cooling to maintain surface temperature below 70°C for operator safety.
- Hermetic hinged stainless steel flanges with elastomer seals and multiple ports for gas inlet, vacuum, and in-situ temperature measurement.
- Capability to operate under vacuum levels down to <1e-4 torr with appropriate pumps and thermal blocks.
기술 사양
| 매개변수 | 사양 |
|---|---|
| 모델 | OTF-1100X-III |
| Maximum Continuous Temperature | 1100°C at ambient pressure |
| Short-Term Maximum Temperature | 1200°C (up to 30 minutes) |
| Vacuum Temperature Limit | 900°C under vacuum |
| Heating Zones | 3 zones, each 300 mm (total 900 mm) |
| Uniform Heating Length | 600 mm ±5°C at 800°C |
| Heating Elements | 42 Silicon Carbide (SiC) elements |
| Heating Rate | Up to 10°C/min (5°C/min recommended) |
| Temperature Controllers | Three programmable PID controllers, 30 segments, ±1°C accuracy, RS-485 communication |
| Optional Controllers | Three Eurotherm 3000 series PID controllers, 24 segments, ±0.1°C accuracy |
| Thermocouple Type | Type K |
| Quartz Tube Options | 11″ or 15″ OD, 73″ length |
| Flanges | Hinged stainless steel elastomer sealed with O-rings, gas inlet, vacuum port, and temperature measurement ports |
| Vacuum Capability | Down to <1e-4 torr with turbo pump and quartz thermal blocks |
| Power Supply | 480 VAC, three phase, 50/60 Hz, 40 A, 30 kVA |
대표적인 적용 분야
This furnace is widely used for high-temperature materials synthesis, wafer annealing, diffusion processes, and heat treatment of bulk samples. Its ability to operate under vacuum or controlled gas atmospheres makes it suitable for semiconductor research, advanced ceramics processing, and thin film preparation.
구성 및 작동 안내
The furnace includes a double-layer steel casing with air cooling to maintain safe surface temperatures. The motorized lid actuators facilitate safe and convenient operation. Optional accessories include quartz wafer boats for 8″ or 12″ wafers and multi-quartz disk thermal blocks for enhanced vacuum performance. Installation requires on-site setup by qualified personnel. Proper handling of vacuum seals and gas connections is essential to maintain performance and safety.
