OTF-1200X-RTP-II-CSS-300 Rapid Thermal Processing Furnace with Rotating Holder for 12″ Wafers
The OTF-1200X-RTP-II-CSS-300 is engineered to meet the demanding requirements of thin film research and semiconductor wafer annealing, particularly for 12-inch substrates. It excels in Close Spaced Sublimation (CSS) film coating processes, enabling uniform deposition of materials such as CdTe, sulfides, and perovskites used in solar cell development. This furnace supports rapid thermal processing with precise temperature control and a high vacuum environment.
The system incorporates dual halogen infrared heaters positioned at the top and bottom of a stainless steel vacuum chamber, allowing independent temperature regulation with a maximum working temperature of 950°C. The top sample holder rotates at adjustable speeds from 1 to 10 RPM to ensure even coating thickness. The vacuum chamber achieves pressures down to 10-5 torr using a turbopump, facilitating high purity processing conditions.
Wichtigste Merkmale
- Dual halogen IR heaters with independent Eurotherm 3000 controllers for precise top and bottom temperature control within ±0.1°C.
- Rotatable 12″ diameter wafer holder integrated into the top heater, adjustable rotation speed from 1 to 10 RPM for uniform film deposition.
- Stainless steel vacuum chamber (20″ ID) capable of reaching 10-5 torr via turbopump; quartz observation windows included.
- Heating rate up to 20ºC/s with max temperature difference between heaters ≤ 300ºC.
- Touch screen computer interface with programmable temperature profiles and vacuum control.
- Water-cooled stainless steel heaters with graphite plates for uniform heat distribution.
- Included 58 L/min circulating water chiller for heater cooling.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Maximale Betriebstemperatur | 950°C |
| Erwärmungsgeschwindigkeit | Up to 20°C/s (max), typically <8°C/s when heating single heater |
| Abkühlgeschwindigkeit | Up to 20°C/s (600-100°C range) |
| Vakuumniveau | 10-5 torr (turbopump), 10-2 torr (mechanical pump optional) |
| Vacuum Chamber Dimensions | ID 500 mm × H 460 mm |
| Wafer Size Compatibility | Up to 12″ diameter wafers |
| Sample Holder Rotation Speed | 1 to 10 RPM adjustable |
| Stromversorgung | 208-240 VAC, 3-phase, 50/60 Hz (380 VAC 3-phase optional) |
| Maximale Leistungsaufnahme | 60 kW (200A breaker required) |
| Genauigkeit der Temperaturregelung | ±0.1°C with Eurotherm 3000 controllers |
| Observation Windows | Two 60 mm diameter quartz windows |
| Kühlsystem | 58 L/min circulating water chiller included |
Typische Anwendungsbereiche
This furnace is ideal for research and development of thin film solar cells including CdTe, sulfide, and perovskite materials. It is also suitable for annealing processes of semiconductor wafers up to 12″ diameter, enabling uniform thermal treatment and film deposition under controlled vacuum conditions.
Hinweise zur Konfiguration und zum Betrieb
Optional accessories include corrosive gas cold traps, anti-corrosive dry pumps, and digital mass flow controllers for gas delivery. The system requires a 200A breaker and appropriate three-phase power supply. Operators should ensure proper water cooling and vacuum pump maintenance for optimal performance. Safety precautions for high temperature and vacuum operation must be observed.
