OTF-1200X-S50-PESL Compact Auto-Sliding PECVD Furnace with 2″ Quartz Tube, Integrated Vacuum Pump, and 1200°C Max Temperature
The OTF-1200X-S50-PESL is engineered for researchers requiring precise plasma-enhanced chemical vapor deposition (PECVD) under controlled vacuum and temperature conditions. This system facilitates rapid thermal processing by allowing the furnace to slide along integrated rails, enabling instant exposure of samples to high temperatures up to 1200°C. It is particularly suited for depositing thin films such as silicon oxides, nitrides, and amorphous silicon with controlled stoichiometry and film stress.
The furnace incorporates a 2-inch outer diameter high purity quartz tube and a 300W RF plasma generator operating at 13.56 MHz frequency. The system includes a vacuum pump capable of achieving a maximum vacuum of 3 x 10⁻³ torr, essential for low-pressure PECVD processes. Temperature control is managed by a 30-segment programmable digital controller, ensuring precise thermal profiles within the heating zone.
Wichtigste Merkmale
- Auto-sliding split tube furnace design enables rapid heating and cooling cycles.
- Maximum operating temperature of 1200°C for short durations; 1100°C for continuous operation.
- 300W RF plasma generator with automatic matching and ±1% power stability.
- High purity quartz tube (2″ O.D x 1.7″ I.D x 39.4″ length) suitable for vacuum and low-pressure use.
- Integrated vacuum pump with oil mist eliminator, achieving vacuum down to 3 x 10⁻³ torr.
- 30-segment programmable temperature controller for precise process control.
- Optional two-zone heating available upon request for enhanced temperature uniformity.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Höchsttemperatur | 1200°C (max 60 min), 1100°C continuous |
| Tube Dimensions | 2″ O.D x 1.7″ I.D x 39.4″ Length, high purity quartz |
| Heizzonen | Single zone (8″ length), two-zone optional |
| Temperaturregler | 30-segment programmable digital controller |
| RF Plasma Generator Power | 5-300W adjustable, ±1% stability |
| RF Frequency | 13.56 MHz ±0.005% |
| Vacuum Pump Power | 750W max, 208-240V AC, 50/60Hz |
| Maximales Vakuum | 3 x 10⁻³ torr |
| Vacuum Flanges Material | Edelstahl 304 |
| Eingangsleistung | 208-240V AC, 1.2 kW (furnace) |
Typische Anwendungsbereiche
This PECVD furnace system is ideal for depositing thin films such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), and hydrogenated amorphous silicon (a-Si:H). It supports research and development in semiconductor fabrication, optical coatings, and material science requiring controlled plasma-enhanced deposition under vacuum and elevated temperatures.
Hinweise zur Konfiguration und zum Betrieb
The system includes an auto-sliding furnace mounted on rails for rapid sample processing. Vacuum flange assemblies with KF fittings and digital Pirani gauge are standard. The vacuum pump includes an oil mist eliminator to maintain clean operation. Optional accessories include oxygen monitoring sensors, multi-channel gas mixers, and advanced temperature control modules with remote software interfaces.
Safe operation requires use of two-stage pressure regulators on gas cylinders to limit pressure below 3 PSI. The quartz tube is designed for vacuum and low-pressure use below 0.2 bar. Gas flow rates should be limited to under 200 SCCM to prevent thermal shock. Continuous operation above 1100°C is not recommended to preserve tube integrity.
