OTF-1200X-PEC4LV Compact Plasma Enhanced Chemical Vapor Deposition Tube Furnace with 4-Channel Gas Delivery and Vacuum Pump
The OTF-1200X-PEC4LV is engineered for advanced thin-film deposition and nanowire synthesis applications requiring precise control of film properties at relatively low processing temperatures. This system utilizes plasma-enhanced chemical vapor deposition (PE-CVD) technology to deposit materials such as silicon oxides, nitrides, oxynitrides, and hydrogenated amorphous silicon onto substrates from gaseous precursors.
Central to the system is a split tube furnace capable of operating up to 1200°C for short durations and 1100°C continuously. Users can select between two high-purity quartz tube diameters (2″ or 3.14″ outer diameter) to accommodate various sample sizes. The furnace temperature is controlled via a programmable digital controller supporting up to 30 segments for complex thermal profiles.
Wichtigste Merkmale
- 300W RF plasma power supply operating at 13.56 MHz with automatic impedance matching and stable output power.
- Four-channel precision mass flow controllers with stainless steel valves for accurate gas mixing and delivery.
- Mechanical two-stage rotary vane vacuum pump integrated with stainless steel vacuum piping and precision valves for reliable vacuum conditions.
- Anti-corrosive vacuum pressure gauge with a wide measurement range and fast atmospheric pressure detection.
- Programmable temperature controller with PID auto-tuning, overheating protection, and up to 30 programmable segments.
- Selectable quartz processing tubes with vacuum-sealed flange assemblies for flexible sample accommodation.
- Optional accessories include oil-free dry vacuum pumps, liquid precursor delivery systems, digital vacuum pressure controllers, and temperature control software upgrades.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Maximum Operating Temperature | 1200°C (up to 60 minutes), 1100°C continuous |
| Furnace Heating Zone Length | 440 mm (single zone), 150 mm constant temperature zone |
| Quartz Tube Options | 2″ OD × 1.7″ ID × 48″ length or 3.14″ OD × 2.83″ ID × 48″ length |
| RF Plasma Power Supply | 5–300W adjustable, 13.56 MHz frequency, ±1% power stability |
| Vakuumpumpe | Two-stage rotary vane, 7.8 CFM (240 L/min), ultimate vacuum ~10⁻² Torr |
| Vacuum Pressure Gauge | Range 3.8×10⁻⁵ to 1125 Torr, anti-corrosive, gas-type independent |
| Gas Mixing System | Four-channel mass flow controllers with 316 stainless steel valves |
| Temperaturregler | Programmable with 30 segments, PID auto-tuning, ±1°C accuracy |
| Power Requirements | Furnace: AC 208–240V, single phase, max 4 kW; RF supply: AC 208–240V, 50/60 Hz |
Typische Anwendungsbereiche
This system is ideal for depositing thin films such as SiOx, SiNx, SiOxNy, and hydrogenated amorphous silicon on substrates for semiconductor, photovoltaic, and nanotechnology research. It supports nanowire growth and precise film stress and stoichiometry control at lower temperatures than conventional CVD methods.
Hinweise zur Konfiguration und zum Betrieb
The system includes a mechanical vacuum pump, vacuum-sealed flanges with valves, and a four-channel gas mixing station with touchscreen control. Optional upgrades include an oil-free dry vacuum pump to reduce contamination risk, liquid precursor delivery systems, and advanced temperature control software with remote PC or Wi-Fi operation. Users should ensure proper handling of corrosive gases and maintain consumable parts such as quartz tubes and O-rings for optimal performance.
Maße & Versand
| Product dimensions | 600 mm (L) × 745 mm (W) × 700 mm (H); 6″ color touchscreen control panel | Furnace dimensions: 550 mm (L) × 380 mm (W) × 520 mm (H); Combined dimensions of three lower mobile equipment cases: 1800 mm (L) × 850 mm (W) × 700 mm (H) |
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