OTF-1200X-S50-PESL Compact Auto-Sliding PECVD Furnace with 2″ Quartz Tube, Integrated Vacuum Pump, and 1200°C Max Temperature
The OTF-1200X-S50-PESL is engineered for researchers requiring precise plasma enhanced chemical vapor deposition (PECVD) processes within a compact footprint. It addresses the challenge of achieving uniform thin film deposition at controlled lower temperatures compared to traditional CVD methods, enabling deposition of materials such as silicon oxides, nitrides, oxynitrides, and amorphous silicon (a-Si:H). The system’s sliding furnace design allows rapid heating and immediate sample exposure, optimizing throughput and process control.
This system integrates a 2-inch outer diameter high purity quartz tube furnace with a 300W RF plasma generator operating at 13.56 MHz, providing stable plasma conditions with automatic impedance matching. The vacuum assembly includes stainless steel 304 flanges and fittings, digital Pirani gauge, and a vacuum pump capable of achieving pressures down to 3 x 10⁻³ torr, essential for high-quality film growth under controlled atmospheres.
Wichtigste Merkmale
- Auto-sliding split tube furnace enabling rapid heating and sample positioning.
- Maximum operating temperature of 1200°C for up to 60 minutes; 1100°C for continuous operation.
- 300W RF plasma generator with ±1% power stability and automatic matching.
- High purity quartz tube (2″ O.D x 1.7″ I.D x 39.4″ length) for contamination-free processing.
- Integrated vacuum system with stainless steel flanges and digital Pirani gauge.
- Programmable 30-segment digital temperature controller for precise thermal profiles.
- Optional two-zone heating available upon request for enhanced temperature uniformity.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Höchsttemperatur | 1200°C (up to 60 minutes), 1100°C continuous |
| Tube Dimensions | 2″ O.D x 1.7″ I.D x 39.4″ Length, high purity quartz |
| Heizzonen | Single zone standard; two-zone optional |
| Temperaturregler | 30-segment programmable digital controller |
| RF Plasma Generator Power | 5 – 300W adjustable, 13.56 MHz frequency |
| Vakuumpumpe | 208-240V, 750W max, 220 L/min (7.8 CFM), max vacuum 3 x 10⁻³ torr |
| Vacuum Flanges | Stainless steel 304 with KF-25 and KF-16 fittings |
| Stromversorgung | 208-240V AC, 1.2 kW furnace; 208-240V AC, 50/60 Hz plasma and pump |
Typische Anwendungsbereiche
The OTF-1200X-S50-PESL is suited for research and development in thin film deposition, including silicon-based dielectric and semiconductor layers. It supports deposition of SiOx, SiNx, SiOxNy, and amorphous silicon films with controlled stoichiometry and film stress, applicable in microelectronics, photovoltaics, and sensor fabrication.
Hinweise zur Konfiguration und zum Betrieb
The system includes the auto-sliding furnace, RF plasma generator, vacuum flange assemblies, and an integrated vacuum pump with oil mist eliminator. Optional upgrades include two-zone heating, oxygen monitoring sensors, and advanced gas delivery systems with multi-channel mass flow controllers. Users should ensure gas flow rates remain below 200 SCCM to prevent thermal shock to the quartz tube and install two-stage pressure regulators to maintain safe operating pressures below 3 PSI. The furnace is designed for vacuum and low-pressure operation below 0.2 bar. Compliance certifications such as CE and NRTL are available upon request.
