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OTF-1200X-III-RR Roll-to-Roll CVD System for Continuous 2D Film Growth and Wire Annealing with 1200°C Max Temperature

Designed for continuous chemical vapor deposition of graphene and other thin films on flexible substrates.
Features a three-zone split tube furnace with 100 mm quartz tube and dual vacuum chambers.
Integrated touchscreen panel for process control and monitoring.

Konformität: CE-zertifiziert
Maßgeschneidert: OEM/ODM
Verpackung: Sperrholzkiste

Produkte

OTF-1200X-III-RR Roll-to-Roll CVD System for Continuous 2D Film Growth and Wire Annealing

The OTF-1200X-III-RR is engineered to facilitate continuous chemical vapor deposition (CVD) processes on flexible substrates such as copper foil, enabling scalable production of graphene and other two-dimensional films. This system supports research and development efforts aimed at advancing roll-to-roll manufacturing technologies by providing precise control over substrate transport and thermal processing.

Wichtigste Merkmale

  • Three-zone split tube furnace with independent temperature control and PID auto-tuning for ±1°C accuracy.
  • 100 mm diameter, 1400 mm length high-purity quartz processing tube connected to vacuum chambers.
  • Dual vacuum chambers for substrate feeding and take-up, maintaining vacuum levels around 5 × 10⁻² Torr.
  • Integrated 7-inch touchscreen control panel for temperature and process monitoring.
  • Optional gas delivery system with three mass flow controllers for methane, hydrogen, and argon gases.
  • Optional vacuum pump and valve system including two-stage rotary vane pump and digital vacuum gauge.
  • Capability for hydrogen wire annealing and custom large-diameter tube configurations upon request.

Technische Daten

Parameter Spezifikation
Furnace Type Three-zone split tube furnace
Höchsttemperatur 1200°C (max 60 min), 1100°C continuous
Heating Zones Length 600 mm total (150 mm + 300 mm + 150 mm)
Quartz Tube Dimensions Ø100 mm × 1400 mm length
Substrate Transport Speed 1–400 mm/min adjustable
Vakuumniveau Approx. 5 × 10⁻² Torr in vacuum chambers
Stromversorgung 220 V AC, single phase, 50/60 Hz
Maximale Leistungsaufnahme 5 kW (furnace), optional 23 kW gas delivery system
Temperaturregelung Three independent digital controllers with PID auto-tuning, ±1°C accuracy
Control Interface 7-inch touchscreen panel

Typische Anwendungsbereiche

The OTF-1200X-III-RR is primarily used for continuous graphene growth on copper foil substrates, enabling scalable production of two-dimensional materials. It also supports thin-film deposition research for flexible electronics, sensors, and advanced material coatings. Optional configurations allow hydrogen wire annealing and processing of larger substrate widths.

Hinweise zur Konfiguration und zum Betrieb

The system includes one roll of copper foil (80 mm width, 0.025 mm thickness) for practice substrate feeding and graphene growth. Optional accessories include a three-channel gas delivery station with mass flow controllers for methane, hydrogen, and argon gases, and a vacuum pump and valve system with a two-stage rotary vane pump. Safety precautions require installation of hydrogen and methane gas leak detection and alarm systems when these gases are used. The maximum furnace temperature should not exceed 1200°C for more than 60 minutes, with continuous operation recommended below 1100°C. The tension control mechanism enhances substrate handling consistency and was integrated into the design starting January 2023. Confirm optional equipment inclusion and plasma functionality availability when ordering, as some features depend on selected configurations.

Maße & Versand

Product dimensions Length: 2400 mm; Width: 600 mm; Height: 1400 mm | 2400 × 600 × 1400 mm (L × W × H)

Produktbezogene Informationen

KSL1200XJH laboratory product view 1
OTF-1200X-VT-5 laboratory product view 1
YLJ-HP1818V laboratory product view 1
OTF-1200X-III-HVC-LD laboratory product view 2
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