ALD-1200X-4 Two-Channel Atomic Layer Deposition 4″ Tube Furnace System with Dual-Zone Heating up to 1200ºC
The ALD-1200X-4 system is engineered for advanced thin film deposition tasks requiring atomic layer precision and controlled chemical vapor deposition (CVD). It is particularly suited for research involving nanomaterial synthesis and thin film growth on substrates, such as in battery and semiconductor development. This system integrates a 4-inch diameter quartz tube furnace with a sophisticated dual-zone heating design, enabling precise thermal management over a 400 mm heating length.
The furnace supports continuous operation up to 1100ºC with two independently controlled heating zones, each 200 mm in length, allowing a maximum temperature differential of 500ºC between zones. This flexibility facilitates complex thermal profiles and uniform deposition processes. The system includes two ALD valves capable of microsecond pulse duration control, enhancing the accuracy of precursor delivery. Additionally, it features a four-channel gas delivery system with mass flow controllers (MFCs) ensuring gas flow precision within ±0.2% full scale.
Wichtigste Merkmale
- Two ALD valves with pulse control down to 10 ms duration and thermal actuator heating capability.
- Dual-zone split tube furnace with programmable digital temperature controllers supporting up to 30 segments.
- 400 mm total heating length with 250 mm constant temperature zone when both zones are synchronized.
- Integrated PLC control via 6″ touchscreen panel for precise management of vapor pulse timing and gas flows.
- Anti-corrosive pressure gauge with a measurement range from 3.8×10-5 to 1125 Torr for reliable vacuum and atmospheric pressure monitoring.
- Optional vacuum pump support achieving vacuum levels down to 10-2 Torr for enhanced process control.
- Expandable system architecture allowing integration with short or rotation tube furnaces and hybrid plasma-enhanced ALD/CVD or ALD/PVD/CVD configurations.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Tube Diameter | 4 inches (Quartz Tube) |
| Heizzonen | Two independently controlled zones |
| Heating Length | 400 mm total (200 mm per zone) |
| Max Continuous Temperature | 1100ºC |
| Maximale Temperaturdifferenz zwischen den Zonen | 500ºC |
| Temperature Controllers | Two programmable digital controllers with 30 segments |
| ALD Valve Pulse Control | Minimum 10 ms pulse duration with microsecond precision |
| Gas Delivery Channels | Four channels with MFC control ±0.2% full scale |
| Pressure Gauge Range | 3.8×10-5 to 1125 Torr, anti-corrosive |
| Stromversorgung | 208–240V AC, single phase, max 4 kW |
| Vacuum Capability (Optional Pump) | Down to 10-2 Torr |
Typische Anwendungsbereiche
This system is ideal for atomic layer deposition and chemical vapor deposition processes in research fields such as solid-state battery development, semiconductor thin film fabrication, and nanomaterial synthesis. It has been referenced in studies addressing interfacial impedance reduction in garnet-based solid-state lithium metal batteries.
Hinweise zur Konfiguration und zum Betrieb
The ALD-1200X-4 includes a mobile cart with a 6″ touchscreen PLC control panel for managing all ALD vapor pulse timing and gas flow parameters. Optional accessories include vacuum pumps, bubblers, evaporators, quartz crystals, and thermocouples for enhanced process monitoring. The system supports integration with rotation tube furnaces and hybrid plasma-enhanced ALD/CVD or ALD/PVD/CVD setups for complex material growth.
Users should ensure gas cylinder pressure is regulated below 3 PSI using a two-stage pressure regulator to prevent thermal shock and maintain safe operation. Gas flow rates should be limited to under 200 SCCM. Vacuum operation is recommended only up to 1000ºC for quartz tube furnaces. Consumable parts such as processing tubes, O-rings, and heating elements are not covered under warranty and should be ordered separately as needed.
