OTF-1100X-II-XX Two-Zone Tube Furnace with 1200°C Max Temperature and Optional Quartz Tube
The OTF-1100X-II-XX is engineered for advanced laboratory thermal treatments requiring precise temperature control and uniformity. It is particularly suited for chemical vapor deposition (CVD) and diffusion processes involving two-dimensional transition metal dichalcogenide (TMD) film growth. The furnace accommodates wafers up to 12″ diameter with an optional quartz tube available in 11″ or 15″ outer diameter, enabling flexible sample sizes and vacuum processing.
This tube furnace features two independently controlled heating zones, each 450 mm in length, providing a total heating zone length of 900 mm. The temperature is regulated by three microprocessor-based PID controllers with self-tuning and 30 programmable segments, achieving ±1°C accuracy and minimizing overshoot. The furnace structure includes a double-layer steel casing with air cooling and refractory fibrous alumina insulation for energy efficiency and safety, maintaining surface temperatures below 70°C.
Wichtigste Merkmale
- Maximum operating temperature of 1200°C with heating and cooling rates up to 10°C/min.
- Optional high-purity fused quartz tube available in 11″ or 15″ OD with 71″ length for vacuum and low-pressure applications.
- Vacuum sealing with stainless steel hinged flanges, high-temperature silicon O-rings, needle valves, and vacuum gauges included.
- Electrical lid actuator for convenient and safe opening of the furnace lid.
- Three K-type thermocouples for precise temperature measurement in each zone.
- Pre-installed needle valves and vacuum gauges for immediate vacuum operation capability.
- Optional PC control software and Eurotherm controllers available for enhanced temperature programming and monitoring.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Höchsttemperatur | 1200°C |
| Heizzonen | Two zones, each 450 mm length (total 900 mm) |
| Temperaturregelung | Three digital PID controllers with self-tuning, ±1°C accuracy, 30 programmable segments |
| Thermocouples | Three K-type thermocouples (one per zone) |
| Heizelemente | NiCrAl resistance wire, 36 SiC heating elements total |
| Isolierung | Refractory fibrous alumina liner with ceramic tube blocks |
| Quartz Tube (Optional) | Fused quartz, 11″ or 15″ OD, 71″ length |
| Vacuum Flanges | Stainless steel hinged flanges with silicon O-rings, needle valves, vacuum gauge |
| Stromversorgung | Three-phase 460V ±10%, 50/60 Hz (380V optional) |
| Stromverbrauch | Max 50 kW |
Typische Anwendungsbereiche
This furnace is widely used for chemical vapor deposition (CVD) processes, annealing, and diffusion treatments of semiconductor wafers, especially for two-dimensional materials such as transition metal dichalcogenides. It supports wafer sizes up to 12″ and is suitable for vacuum and low-pressure environments.
Hinweise zur Konfiguration und zum Betrieb
The furnace includes pre-installed vacuum components such as needle valves and vacuum gauges for immediate use. An electrical lid actuator facilitates safe and easy lid operation. Optional accessories include PC control software, Eurotherm controllers for enhanced temperature accuracy, calibration kits, quartz boats, and turbopumps for high vacuum applications. The quartz tube is fragile and must be handled with care; warranty does not cover breakage due to use.
For safe operation under vacuum or low pressure (<0.2 bar), a two-stage pressure regulator is required to limit gas cylinder pressure below 3 PSI. Gas flow rates should be limited to under 200 SCCM to prevent thermal shock to the quartz tube. Vacuum operation is recommended up to 1000°C maximum.
