GSL1100XII11 Dual Zone 1200°C Tube Furnace with 11″ Quartz Tube and Vacuum Flanges
The GSL1100XII11 tube furnace is engineered for precise thermal processing tasks such as sintering novel material samples and annealing semiconductor wafers up to 8″ diameter under vacuum or controlled gas environments. Its dual-zone heating design provides a total heating length of 24 inches, with a central 300 mm zone capable of maintaining temperature uniformity within ±1°C when both zones are set identically.
This furnace incorporates an 11″ outer diameter fused quartz tube (279 mm O.D. x 269 mm I.D. x 1000 mm length) that accommodates wafer boats and sample holders. The system includes hinged-type stainless steel vacuum flanges with water cooling to maintain low flange temperatures during operation. Cooling water supply is required but the water chiller is sold separately.
Wichtigste Merkmale
- Maximum temperature up to 1200°C for short durations (<60 min) under inert gas flow; continuous operation between 400°C and 1000°C under vacuum or flowing gas.
- Two independent heating zones, each 300 mm long, with a combined 600 mm heating length and a 300 mm constant temperature zone.
- High-precision dual PID temperature controllers with 30 programmable segments and ±1°C accuracy; optional Eurotherm controller available for ±0.1°C accuracy.
- Includes one 11″ O.D. fused quartz tube suitable for 8″ wafer boats; optional quartz blocks and crucibles available.
- Equipped with hinged stainless steel vacuum flanges featuring water cooling; includes mechanical vacuum gauge, needle valves, KF25 vacuum port, and feedthroughs.
- High-purity alumina fibrous insulation for energy efficiency and hinged flange design for easy sample loading.
- Optional accessories include water chillers, computerized temperature control software, vacuum pumps, gas mixing stations, and quartz sample holders.
Technische Daten
| Parameter | Spezifikation |
|---|---|
| Modell | GSL1100XII11 |
| Heizzonen | Two zones, each 300 mm (12″) long; total 600 mm (24″) |
| Konstanttemperaturzone | 300 mm at center with ±1°C uniformity |
| Höchsttemperatur | 1200°C (under inert gas, <60 min) |
| Continuous Operating Temperature | 400°C to 1000°C (under vacuum and flowing gas) |
| Heating/Cooling Rate | Up to 20°C/min |
| Furnace Tube | Fused quartz, 279 mm O.D. x 269 mm I.D. x 1000 mm length (11″ O.D. x 10.6″ I.D. x 40″ L) |
| Heating Element | NiCrAl resistance wire |
| Temperaturregler | Dual PID controllers with 30 programmable segments; K-type thermocouple; ±1°C accuracy |
| Vacuum Flanges | Hinged stainless steel with water cooling; KF25 vacuum port; mechanical gauge included |
| Stromversorgung | 208-240V AC, single phase, 8 kW (requires 50A air breaker) |
| Isolierung | High-purity alumina fibrous insulation |
Typische Anwendungsbereiche
Ideal for sintering diverse new material samples and annealing semiconductor wafers up to 8″ diameter under vacuum or controlled gas atmospheres. Suitable for research labs focusing on materials science, semiconductor processing, and thin film development.
Hinweise zur Konfiguration und zum Betrieb
The furnace requires an external water chiller for flange cooling; a recommended model is the EQ-KJ5000 series (sold separately). Cooling water flow should be ≥10 L/min at temperatures below 25°C and pressure above 25 PSI. Vacuum operation is limited by the vacuum pump capability, typically achieving 10-2 torr with mechanical pumps and 10-4 torr with turbomolecular pumps. Safe operation under vacuum requires a two-stage pressure regulator on gas cylinders to limit pressure below 3 PSI. Optional accessories include computerized temperature control software, vacuum pumps, gas mixing stations, and quartz sample holders. The furnace is CE certified; additional certifications are available upon request at extra cost.
