CM-HIP-2-II Swingable Dual Heating-Zone High-Pressure Furnace for GaN Crystal Growth, Up to 1200°C and 10 MPa
The CM-HIP-2-II furnace is engineered to meet the demanding requirements of crystal growth processes such as the flux method, ammonia-thermal synthesis, and liquid phase epitaxy (LPE) for materials like gallium nitride (GaN) and yttrium iron garnet (YIG). Its design also supports conventional hot isostatic pressing (HIP) applications, enabling treatment of samples up to 200 mm in length and 3 inches in diameter under high pressure and temperature conditions.
This furnace incorporates a swingable stainless steel chamber with water cooling, allowing ±15 degrees of tilt via a gear motor to promote uniform melting and mixing of flux materials. The chamber dimensions are Ø310 × Ø205 × H250 mm, constructed from SS304 steel with integrated water-cooled high-pressure electric feedthroughs for resistance heating. The dual heating zones, each 80 mm in diameter and 130 mm in length, are separated by a 3 mm thick ceramic plate, enabling independent temperature control up to 1200°C at pressures up to 10 MPa.
Key Features
- Dual independent heating zones with Mo or Ni-Cr-Al resistance wire elements and molybdenum reflection plates.
- Swingable furnace chamber driven by a gear motor for uniform flux melting and mixing.
- Stainless steel (SS304) water-cooled chamber with high-pressure electric feedthroughs and safety features including mechanical pressure relief valve.
- Digital high-pressure transmitter and G1/4 gas inlet/outlet with high-pressure needle valves for precise atmosphere control.
- Two Eurotherm 3000 series temperature controllers with ±0.1°C stability and RS485 communication for PC-based remote operation.
- Included KJ6200 water chiller for temperature regulation and optional vacuum capability with mechanical or turbopumps.
- CE certified with options for NRTL (UL61010) or CSA certification at additional cost.
Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Temperature | 1200°C (upgradeable to 1500°C optional) |
| Maximum Pressure | 10 MPa |
| Heating Zones | Two independent zones, 80 mm ID × 130 mm length each |
| Heating Elements | Mo or Ni-Cr-Al resistance wire with molybdenum reflection plates |
| Temperature Control | Two Eurotherm 3000 series controllers, ±0.1°C stability, 24 segment ramp/cool/dwell |
| Chamber Material | SS304 stainless steel with water cooling jacket |
| Chamber Dimensions | Ø310 × Ø205 × H250 mm |
| Swing Angle | ±15 degrees by gear motor |
| Power Supply | 208-240 VAC, 50-60 Hz, max 10 kW |
| Vacuum Capability | Optional vacuum pump: double stage mechanical (10E-2 torr) or turbopump (10E-5 torr) |
| Safety Features | Mechanical pressure relief valve, explosive-proof steel cover |
Typical Applications
Ideal for GaN single crystal growth using flux and ammonia-thermal methods, liquid phase epitaxy (LPE) for YIG, and other advanced crystal growth techniques requiring controlled high pressure and temperature.
Also suitable for hot isostatic pressing (HIP) treatments of samples up to 200 mm length and 3 inches diameter.
Configuration & Operating Notes
The furnace includes a mobile cart for ease of movement and an explosive-proof steel cover for safe operation. It comes with a digital high-pressure transmitter and integrated water chiller (KJ6200) for temperature regulation.
Optional upgrades include a vacuum pump system for low-pressure operation and temperature increase to 1500°C. Remote control software with RS485 interface is provided, with an optional pre-installed laptop available.
