GSLALD4 Two-Channel ALD Control Unit with Four-Channel MFC Gas Delivery System for Precise Thin Film and Powder Coating
The GSLALD4 control unit is engineered to facilitate atomic layer deposition (ALD) processes requiring precise delivery and timing of precursor vapors and carrier gases. It is particularly suited for integrating with various furnaces or chambers to enable uniform thin film growth or powder surface coating. This system addresses the need for accurate pulse control and gas flow regulation in ALD applications.
At its core, the GSLALD4 combines two ALD valve channels capable of microsecond-precise pulse duration and cycling with a four-channel mass flow controller (MFC) gas delivery system. The MFCs independently regulate the flow of up to four different carrier gases or mixtures, ensuring stable and repeatable gas delivery. The unit is mounted on a mobile cart and operated via a 6-inch PLC touchscreen interface, allowing intuitive adjustment of vapor pulse times and gas flow rates for each channel.
Key Features
- Two ALD valves with maximum switching frequency of 283 Hz and minimum pulse time of 10 ms for precise precursor delivery.
- Four mass flow controllers with ranges: 0–100 SCCM, 1–199 SCCM (two units), and 1–499 SCCM, each with ±0.2% full scale accuracy.
- Integrated stainless steel gas mixing tank (80 mm diameter × 120 mm length) for stable gas blending.
- 6-inch PLC touchscreen panel for real-time control of pulse timing and gas flow parameters.
- RS485 communication port and supplied software enable remote operation and monitoring via PC.
- All gas pipelines use 1/4″ O.D stainless steel internally and 1/4″ O.D PTFE externally for chemical resistance and durability.
- Includes four 316 stainless steel needle valves and Swagelok tube fittings for precise flow adjustments and secure connections.
Technical Specifications
| Parameter | Specification |
|---|---|
| Working Voltage | AC 220 V, Single Phase, 50/60 Hz |
| Power Consumption | 100 W |
| ALD Valve Control | Two valves, max frequency 283 Hz, min pulse time 10 ms, microsecond precision |
| Mass Flow Controllers (MFCs) | Four channels with ranges: 0–100 SCCM, 1–199 SCCM (×2), 1–499 SCCM; accuracy ±1.5% FS; repeatability ±0.2% FS |
| Operating Temperature | 5 to 45 °C |
| Maximum Pressure | 3 × 10⁶ Pa |
| Gas Mixing Tank Dimensions | 80 mm diameter × 120 mm length, stainless steel |
| Gas Pipeline Materials | Internal: 1/4″ O.D stainless steel; External: 1/4″ O.D PTFE |
| Valves and Fittings | Four 316 stainless steel needle valves; 1/4″ Swagelok tube fittings |
| Control Interface | 6″ PLC touchscreen panel; RS485 port for PC remote control |
| Certifications | CE certified; TUV (UL61010) or CSA certification available at extra cost |
Typical Applications
This unit is ideal for researchers and engineers developing ALD processes for thin film deposition on substrates or surface modification of powders. It supports custom ALD system integration with various furnaces or vacuum chambers, enabling precise control of precursor vapor pulses and carrier gas flows for uniform coating and material property tuning.
Configuration and Operating Notes
The GSLALD4 includes two ALD valves and four MFCs as standard. Additional ALD channels or MFC ranges can be customized upon request at extra cost. Optional accessories such as bubblers or vapor delivery systems are available to enhance precursor vapor generation. The system can be integrated with MTI tube furnaces or other heating chambers with additional configuration support.
Users should ensure operating conditions remain within specified temperature and pressure limits. Proper gas handling and safety protocols must be followed when working with precursor vapors and carrier gases. Remote control via RS485 facilitates integration into automated process workflows.
