VBF-1100X-RTP-ASD Fully Automatic Bottom-Loading Rapid Thermal Processing Furnace with 1100°C Max, 50°C/s Heating Rate, Ø210×H100 mm Chamber
The VBF-1100X-RTP-ASD is engineered for demanding rapid thermal processing tasks such as wafer annealing, single-atom catalyst synthesis, and high-throughput materials research. It accommodates wafers up to 6 inches in diameter and features a bottom-loading quartz chamber that facilitates automated sample exchange, enhancing workflow efficiency and repeatability in controlled atmosphere environments.
This furnace achieves rapid heating rates up to 50°C per second using twelve shortwave infrared lamps delivering a total of 18 kW power. The sealed quartz chamber (Ø200 × H100 mm) is equipped with a water-cooled stainless steel flange sealing system to maintain an airtight environment, enabling precise control of vacuum and gas atmospheres. Continuous operation is supported up to 1000°C, with short-term processing at 1100°C for up to 30 minutes.
Key Features
- Bottom-loading design with automated sample loading and unloading
- Rapid heating up to 50°C/s via 12 shortwave infrared lamps (total 18 kW)
- Airtight quartz chamber (Ø200 × H100 mm) with water-cooled stainless steel flange seals
- Continuous operation at 1000°C; peak temperature 1100°C for 30 minutes
- Integrated PID temperature control with touchscreen interface and 50 programmable segments
- Vacuum and pressure monitoring with resistance vacuum gauge and micro-positive pressure control (103,000–120,000 Pa)
- Mass flow controller for programmable gas flow up to 5000 sccm and automated gas purging
- PC software for multi-furnace control, data logging, and optional robotic arm integration for autonomous operation
Technical Specifications
| Parameter | Specification |
|---|---|
| Model | VBF-1100X-RTP-ASD |
| Product Type | Fully Automatic Bottom-Loading Rapid Thermal Processing Furnace |
| Power Supply | 208 VAC, three-phase, 50/60 Hz |
| Maximum Power | 18 kW |
| Quartz Chamber Dimensions | Ø200 × H100 mm |
| Heating Zone Dimensions | Ø210 × H100 mm |
| Heating Elements | 12 shortwave infrared lamps, 1.5 kW each |
| Continuous Operating Temperature | 1000°C |
| Maximum Operating Temperature | 1100°C (up to 30 minutes) |
| Heating Rate | Up to 50°C/s (recommended 10°C/s) |
| Cooling Rate (Sealed Chamber) | 800°C to 350°C: 55°C/min; 350°C to 200°C: 5°C/min |
| Cooling Rate (Open Chamber) | 800°C to 350°C: 200°C/min; 350°C to 50°C: 35°C/min |
| Thermocouple Type | Type K |
| Temperature Control | PID automatic control, touchscreen, ±1°C accuracy standard, optional ±0.1°C Eurotherm upgrade |
| Furnace Structure & Insulation | Dual-layer chamber, air cooling, high-purity alumina fiber insulation |
| Pressure Control | Vacuum and pressure monitoring, resistance vacuum gauge, micro-positive pressure 103,000–120,000 Pa |
| Gas Flow Control | Integrated mass flow controller, 0–5000 sccm, programmable gas purging |
| Wafer Compatibility | Up to 6 inches diameter |
| Weight | 120 kg |
Typical Applications
This furnace is ideal for rapid thermal annealing of semiconductor wafers, preparation of single-atom catalysts, materials heat treatment, and other processes requiring precise temperature ramping and controlled atmospheres. Its automated bottom-loading and PC-controlled multi-unit operation support high-throughput research and production environments.
Configuration & Operating Notes
The system includes a water-cooled stainless steel flange sealing assembly for atmosphere control and an airtight quartz chamber. It features integrated vacuum and pressure gauges, mass flow controllers for gas management, and PID temperature control with touchscreen interface. Optional upgrades include a Eurotherm controller for enhanced temperature accuracy and robotic arm integration for autonomous sample handling. Users must ensure availability of 208 VAC three-phase power supply rated for 18 kW.
